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MUN5313DW1T1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
MUN5311DW1T1 Series
http://onsemi.com
10
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 PNP TRANSISTOR
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA) h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 27. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
010203040
75°C
25°C
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 28. DC Current Gain
1000
100
10
1 10 100
I
C
, COLLECTOR CURRENT (mA)
-25°C
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
010
25°C
V
in
, INPUT VOLTAGE (VOLTS)
-25°C
50
0 10203040
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
123456 789
Figure 31. Input Voltage versus Output Current
100
10
1
0.1
0 10 20 30 40
I
C
, COLLECTOR CURRENT (mA)
T
A
=-25°C
25°C
75°C
50
I
C
/I
B
= 10
T
A
=-25°C
25°C
T
A
=75°C
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
V
O
= 5 V
T
A
=75°C
V
O
= 0.2 V
MUN5311DW1T1 Series
http://onsemi.com
11
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 NPN TRANSISTOR
10
1
0.1
01020304050
100
10
1
0246810
4
3.5
3
2.5
2
1.5
1
0.5
0
02468101520253035404550
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 32. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
020406080
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 33. DC Current Gain
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
Figure 36. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
T
A
=75°C
V
CE
= 10
300
250
200
150
100
50
0
2468 1520405060708090
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
25°C
I
C
/I
B
= 10
T
A
=-25°C
T
A
=75°C
25°C
-25°C
V
O
= 0.2 V
T
A
=-25°C
75°C
V
O
= 5 V
25°C
75°C
MUN5311DW1T1 Series
http://onsemi.com
12
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 PNP TRANSISTOR
10
1
0.1
010 20 30 4050
100
10
1
0 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0 2 4 6 8101520253035404550
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
in
, INPUT VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT GAIN (NORMALIZED)
Figure 37. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
020406080
V
CE(sat)
, MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 38. DC Current Gain
1 10 100
I
C
, COLLECTOR CURRENT (mA)
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C
ob
, CAPACITANCE (pF)
Figure 41. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
T
A
=75°C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
25°C
I
C
/I
B
= 10
T
A
=-25°C
T
A
=75°C
25°C
-25°C
V
O
= 5 V
V
O
= 0.2 V
25°C
T
A
=-25°C
75°C
75°C
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

MUN5313DW1T1

Mfr. #:
Buy MUN5313DW1T1
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA Complementary
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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