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SST39VF1682-70-4I-B3KE-T

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P34
©2011 Silicon Storage Technology, Inc. DS25040A 05/11
13
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Data Sheet
A
Microchip Technology Company
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating con-
ditions may affect device reliability.)
Temperature Under Bias ............................................. -55°C to +125°C
Storage Temperature ................................................ -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................-0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ..................-2.0V to V
DD
+2.0V
Voltage on A
9
Pin to Ground Potential .....................................-0.5V to 13.2V
Package Power Dissipation Capability (Ta = 25°C) .................................. 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) ............................ 240°C
Output Short Circuit Current
1
.................................................. 50mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
Table 10:Operating Range
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V
T10.1 25040
Table 11:AC Conditions of Test
1
1. See Figures 18 and 19
Input Rise/Fall Time Output Load
5ns C
L
=30pF
T11.1 25040
©2011 Silicon Storage Technology, Inc. DS25040A 05/11
14
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Data Sheet
A
Microchip Technology Company
Table 12:DC Operating Characteristics V
DD
= 2.7-3.6V
1
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DD
Power Supply Current Address input=V
ILT
/V
IHT
2
, at f=5 MHz,
V
DD
=V
DD
Max
Read
3
18 mA CE#=V
IL
, OE#=WE#=V
IH
, all I/Os
open
Program and Erase 35 mA CE#=WE#=V
IL
, OE#=V
IH
I
SB
Standby V
DD
Current 20 µA CE#=V
IHC
,V
DD
=V
DD
Max
I
ALP
Auto Low Power 20 µA CE#=V
ILC
,V
DD
=V
DD
Max
All inputs=V
SS
or V
DD,
WE#=V
IHC
I
LI
Input Leakage Current 1 µA V
IN
=GND to V
DD
,V
DD
=V
DD
Max
I
LIW
Input Leakage Current
on WP# pin and RST#
10 µA WP#=GND to V
DD
or RST#=GND to
V
DD
I
LO
Output Leakage Current 10 µA V
OUT
=GND to V
DD
,V
DD
=V
DD
Max
V
IL
Input Low Voltage 0.8 V V
DD
=V
DD
Min
V
ILC
Input Low Voltage (CMOS) 0.3 V V
DD
=V
DD
Max
V
IH
Input High Voltage 0.7V
DD
VV
DD
=V
DD
Max
V
IHC
Input High Voltage (CMOS) V
DD
-0.3 V V
DD
=V
DD
Max
V
OL
Output Low Voltage 0.2 V I
OL
=100 µA, V
DD
=V
DD
Min
V
OH
Output High Voltage V
DD
-0.2 V I
OH
=-100 µA, V
DD
=V
DD
Min
T12.8 25040
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
(room temperature), and V
DD
= 3V. Not 100% tested.
2. See Figure 18
3. The I
DD
current listed is typically less than 2mA/MHz, with OE# at V
IH.
Typical V
DD
is 3V.
Table 13:Recommended System Power-up Timings
Symbol Parameter Minimum Units
T
PU-READ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Power-up to Read Operation 100 µs
T
PU-WRITE
1
Power-up to Program/Erase Operation 100 µs
T13.0 25040
Table 14:Capacitance (Ta = 25°C, f=1 MHz, other pins open)
Parameter Description Test Condition Maximum
C
I/O
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
I/O Pin Capacitance V
I/O
=0V 12pF
C
IN
1
Input Capacitance V
IN
=0V 6pF
T14.0 25040
©2011 Silicon Storage Technology, Inc. DS25040A 05/11
15
16 Mbit Multi-Purpose Flash Plus
SST39VF1681 / SST39VF1682
Data Sheet
A
Microchip Technology Company
AC Characteristics
Table 15:Reliability Characteristics
Symbol Parameter Minimum Specification Units Test Method
N
END
1,2
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 + I
DD
mA JEDEC Standard 78
T15.2 25040
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. N
END
endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would
result in a higher minimum specification.
Table 16:Read Cycle Timing Parameters V
DD
= 2.7-3.6V
Symbol Parameter
SST39VF168x-70
UnitsMin Max
T
RC
Read Cycle Time 70 ns
T
CE
Chip Enable Access Time 70 ns
T
AA
Address Access Time 70 ns
T
OE
Output Enable Access Time 35 ns
T
CLZ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
CE# Low to Active Output 0 ns
T
OLZ
1
OE# Low to Active Output 0 ns
T
CHZ
1
CE# High to High-Z Output 20 ns
T
OHZ
1
OE# High to High-Z Output 20 ns
T
OH
1
Output Hold from Address Change 0 ns
T
RP
1
RST# Pulse Width 500 ns
T
RHR
1
RST# High before Read 50 ns
T
RY
1,2
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
This parameter does not apply to Chip-Erase operations.
RST# Pin Low to Read Mode 20 µs
T16.1 25040
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P34

SST39VF1682-70-4I-B3KE-T

Mfr. #:
Buy SST39VF1682-70-4I-B3KE-T
Manufacturer:
Microchip Technology
Description:
NOR Flash 2.7 to 3.6V 16Mbit Multi-Purpose Flash
Lifecycle:
New from this manufacturer.
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