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HGT1S7N60A4DS

P1-P3P4-P6P7-P9
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
HGTG7N60A4D, HGTP7N60A4D,
HGT1S7N60A4DS
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGTG7N60A4D, HGTP7N60A4D and
HGT1S7N60A4DS are MOS gated high voltage switching
devices combining the best features of MOSFETs and
bipolar transistors. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C. The
IGBT used is the development type TA49331. The diode
used in anti-parallel is the development type TA49370.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential. This device has been
optimized for high frequency switch mode power
supplies.
Formerly Developmental Type TA49333.
Symbol
Features
• >100kHz Operation At 390V, 7A
• 200kHz Operation At 390V, 5A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . 75ns at T
J
= 125
o
C
• Low Conduction Loss
• Temperature Compensating SABER™ Model
www.fairchildsemi.com
Packaging
JEDEC STYLE TO-247
JEDEC TO-220AB
JEDEC TO-263AB
Ordering Information
PART NUMBER PACKAGE BRAND
HGTG7N60A4D TO-247 G7N60A4D
HGTP7N60A4D TO-220AB G7N60A4D
HGT1S7N60A4DS TO-263AB G7N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, e.g.,
HGT1S7N60A4DS9A.
C
E
G
COLLECTOR
(FLANGE)
C
E
G
COLLECTOR
(FLANGE)
C
E
G
COLLECTOR
(FLANGE)
G
E
FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet January 2005
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
Absolute Maximum Ratings T
C
= 25
o
C, Unless Otherwise Specified
ALL TYPES UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CES
600 V
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
34 A
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
14 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
CM
56 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GEM
±30 V
Switching Safe Operating Area at T
J
= 150
o
C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA 35A at 600V
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125 W
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/
o
C
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
-55 to 150
o
C
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
PKG
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications T
J
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BV
CES
I
C
= 250µA, V
GE
= 0V 600 - - V
Collector to Emitter Leakage Current I
CES
V
CE
= 600V T
J
= 25
o
C - - 250 µA
T
J
= 125
o
C--2mA
Collector to Emitter Saturation Voltage V
CE(SAT)
I
C
= 7A,
V
GE
= 15V
T
J
= 25
o
C-1.92.7V
T
J
= 125
o
C-1.62.2V
Gate to Emitter Threshold Voltage V
GE(TH)
I
C
= 250µA, V
CE
= 600V 4.5 5.9 7 V
Gate to Emitter Leakage Current I
GES
V
GE
= ±20V - - ±250 nA
Switching SOA SSOA T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V,
L = 100µH, V
CE
= 600V
35 - - A
Gate to Emitter Plateau Voltage V
GEP
I
C
= 7A, V
CE
= 300V - 9 - V
On-State Gate Charge Q
g(ON)
I
C
= 7A,
V
CE
= 300V
V
GE
= 15V - 37 45 nC
V
GE
= 20V - 48 60 nC
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 25
o
C,
I
CE
= 7A,
V
CE
= 390V,
V
GE
= 15V,
R
G
= 25Ω,
L = 1mH,
Test Circuit (Figure 24)
-11 - ns
Current Rise Time t
rI
-11 - ns
Current Turn-Off Delay Time t
d(OFF)I
- 100 - ns
Current Fall Time t
fI
-45 - ns
Turn-On Energy E
ON1
-55 - µJ
Turn-On Energy E
ON2
- 120 150 µJ
Turn-Off Energy (Note 2) E
OFF
-6075µJ
Current Turn-On Delay Time t
d(ON)I
IGBT and Diode at T
J
= 125
o
C,
I
CE
= 7A,
V
CE
= 390V, V
GE
= 15V,
R
G
= 25Ω,
L = 1mH,
Test Circuit (Figure 24)
-10 - ns
Current Rise Time t
rI
-7 - ns
Current Turn-Off Delay Time t
d(OFF)I
- 130 150 ns
Current Fall Time t
fI
-7585ns
Turn-On Energy (Note 2) E
ON1
-50 - µJ
Turn-On Energy (Note 2) E
ON2
- 200 215 µJ
Turn-Off Energy (Note 3) E
OFF
- 125 170 µJ
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
Diode Forward Voltage V
EC
I
EC
= 7A - 2.4 - V
Diode Reverse Recovery Time t
rr
I
EC
= 7A, dI
EC
/dt = 200A/µs-34-ns
I
EC
= 1A, dI
EC
/dt = 200A/µs-22-ns
Thermal Resistance Junction To Case R
θJC
IGBT - - 1.0
o
C/W
Diode - - 2.2
o
C/W
NOTES:
2. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. E
ON1
is the turn-on loss of the IGBT only. E
ON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same T
J
as the IGBT. The diode type is specified in
Figure 24.
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
Electrical Specifications T
J
= 25
o
C, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
T
C
, CASE TEMPERATURE (
o
C)
I
CE
, DC COLLECTOR CURRENT (A)
50
10
0
30
20
25
25 75 100 125 150
35
V
GE
= 15V
15
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
700
20
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
300 400200100 500 600
0
30
10
40
T
J
= 150
o
C, R
G
= 25Ω, V
GE
= 15V, L = 100µH
f
MAX
, OPERATING FREQUENCY (kHz)
1
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
30
200
20510
500
T
J
= 125
o
C, R
G
= 25Ω, L = 1mH, V
CE
= 390V
100
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
ØJC
= 1.0
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
T
C
V
GE
15V
75
o
C
V
GE
, GATE TO EMITTER VOLTAGE (V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (µs)
10 11 12 15
4
6
14
20
80
100
14016
13 14
8
10
12
40
60
120
V
CE
= 390V, R
G
= 25Ω, T
J
= 125
o
C
t
SC
I
SC
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
P1-P3P4-P6P7-P9

HGT1S7N60A4DS

Mfr. #:
Buy HGT1S7N60A4DS
Manufacturer:
ON Semiconductor
Description:
IGBT 600V 34A 125W TO263AB
Lifecycle:
New from this manufacturer.
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