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HGT1S7N60A4DS

P1-P3P4-P6P7-P9
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
01.0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
5
10
1.5 2.0 3.0
25
20
T
J
= 125
o
C
T
J
= 150
o
C
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
GE
= 12V
30
T
J
= 25
o
C
0.5 2.5
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
DUTY CYCLE < 0.5%, V
GE
= 15V
PULSE DURATION = 250µs
T
J
= 150
o
C T
J
= 25
o
C
0
5
10
25
20
30
15
0 1.0 1.5 2.0 3.00.5 2.5
T
J
= 125
o
C
E
ON2
, TURN-ON ENERGY LOSS (µJ)
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
200
400
0
42 6 8 101214
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
R
G
= 25Ω, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
100
0
500
300
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
0
50
200
100
250
350
T
J
= 25
o
C, V
GE
= 12V OR 15V
T
J
= 125
o
C, V
GE
= 12V OR 15V
150
R
G
= 25Ω, L = 1mH, V
CE
= 390V
42 6 8 1012140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(ON)I
, TURN-ON DELAY TIME (ns)
8
14
16
T
J
= 125
o
C, V
GE
= 15V
R
G
= 25Ω, L = 1mH, V
CE
= 390V
12
10
T
J
= 25
o
C, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V
T
J
= 25
o
C, V
GE
= 12V
42681012140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
rI
, RISE TIME (ns)
0
20
10
40
30
R
G
= 25Ω, L = 1mH, V
CE
= 390V
T
J
= 25
o
C, V
GE
= 12V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 12V, V
GE
= 15V
42 6 8 1012140
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS
FIGURE 15. TOTAL SWITCHING LOSS vs CASE
TEMPERATURE
FIGURE 16. TOTAL SWITCHING LOSS vs GATE RESISTANCE
Typical Performance Curves Unless Otherwise Specified (Continued)
100
60
80
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
180
140
160
120
V
GE
= 15V, T
J
= 125
o
C
R
G
= 25Ω, L = 1mH, V
CE
= 390V
42681012140
V
GE
= 12V, T
J
= 125
o
C
V
GE
= 15V, T
J
= 25
o
C
V
GE
= 12V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
20
40
30
60
80
50
70
R
G
= 25Ω, L = 1mH, V
CE
= 390V
90
T
J
= 125
o
C, V
GE
= 12V OR 15V
T
J
= 25
o
C, V
GE
= 12V OR 15V
42681012140
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
40
60
8 9 11 12 15
V
GE
, GATE TO EMITTER VOLTAGE (V)
14
80
100
120
7
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, V
CE
= 10V
T
J
= 125
o
C T
J
= -55
o
C
T
J
= 25
o
C
20
1310
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q
G
, GATE CHARGE (nC)
0
3
I
G(REF)
= 1mA, R
L
= 43Ω, T
J
= 25
o
C
V
CE
= 200V
V
CE
= 400V
6
9
12
15
5101520 3025 35 400
V
CE
= 600V
I
CE
= 3.5A
0
200
50 75 100
T
C
, CASE TEMPERATURE (
o
C)
400
12525 150
800
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (µJ)
E
TOTAL
= E
ON2
+ E
OFF
R
G
= 25Ω, L = 1mH, V
CE
= 390V, V
GE
= 15V
600
I
CE
= 14A
I
CE
= 7A
0.1
100
R
G
, GATE RESISTANCE (Ω)
1
10 1000
E
TOTAL
, TOTAL SWITCHING ENERGY LOSS (mJ)
10
T
J
= 125
o
C, L = 1mH, V
CE
= 390V, V
GE
= 15V
E
TOTAL
= E
ON2
+ E
OFF
I
CE
= 3.5A
I
CE
= 7A
I
CE
= 14A
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
©2005 Fairchild Semiconductor Corporation HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS Rev. B1
FIGURE 17. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 18. COLLECTOR TO EMITTER ON-STATE VOLTAGE
vs GATE TO EMITTER VOLTAGE
FIGURE 19. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 20. RECOVERY TIMES vs FORWARD CURRENT
FIGURE 21. RECOVERY TIMES vs RATE OF CHANGE OF
CURRENT
FIGURE 22. STORED CHARGE vs RATE OF CHANGE OF
CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (nF)
0 20406080100
0
0.2
0.6
0.8
1.4
0.4
FREQUENCY = 1MHz
C
IES
C
OES
C
RES
1.2
1.0
V
GE
, GATE TO EMITTER VOLTAGE (V)
9
1.8
10 12
2.0
2.4
2.2
11 13 14 15 16
2.6
2.8
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
I
CE
= 14A
I
CE
= 7A
I
CE
= 3.5A
DUTY CYCLE < 0.5%, T
J
= 25
o
C
PULSE DURATION = 250
µ
s
123 5
I
EC
, FORWARD CURRENT (A)
V
EC
, FORWARD VOLTAGE (V)
04
0
10
15
20
25
25
o
C
125
o
C
5
35
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%,
30
60
40
20
0
t
rr
, RECOVERY TIMES (ns)
I
EC
, FORWARD CURRENT (A)
0
80
2 8 12 14
dI
EC
/dt = 200A/µs
125
o
C t
rr
25
o
C t
b
25
o
C t
a
25
o
C t
rr
100
10
125
o
C t
b
64
125
o
C t
a
200 300 400 600 700
t
rr
, RECOVERY TIMES (ns)
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/µs)
100 500
10
50
20
30
40
60
I
EC
= 7A, V
CE
= 390V
125
o
C t
b
25
o
C t
a
25
o
C t
b
125
o
C t
a
300
200
100
0
Q
rr
, REVERSE RECOVERY CHARGE (nc)
di
EC
/dt, RATE OF CHANGE OF CURRENT (A/µs)
400100 200 300
400
500 600 700
125
o
C, I
EC
= 7A
125
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 3.5A
25
o
C, I
EC
= 7A
V
CE
= 390V
500
HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS
P1-P3P4-P6P7-P9

HGT1S7N60A4DS

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Buy HGT1S7N60A4DS
Manufacturer:
ON Semiconductor
Description:
IGBT 600V 34A 125W TO263AB
Lifecycle:
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