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PBHV9040X,115

P1-P3P4-P6P7-P9P10-P12P13-P15
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
PBHV9040X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 3 / 14
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -500 V
V
CEO
collector-emitter voltage open base - -400 V
V
CESM
collector-emitter peak voltage V
BE
= 0 V - -500 V
V
EBO
emitter-base voltage open collector - -6 V
I
C
collector current - -0.25 A
I
CM
peak collector current - -0.5 A
I
BM
peak base current
single pulse; t
p
≤ 1 ms
- -200 mA
[1] - 0.52 WP
tot
total power dissipation T
amb
≤ 25 °C
[2] - 1.5 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -55 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, standard footprint
Fig. 1. Power derating curves
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
PBHV9040X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 4 / 14
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 240 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - - 83 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 20 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
006aab847
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
- 1
10
- 5
1010
- 2
10
- 4
10
2
10
- 1
t
p
(s)
10
- 3
10
3
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab848
10
1
10
2
10
3
Z
th(j-a)
(K/W)
10
- 1
10
- 5
1010
- 2
10
- 4
10
2
10
- 1
t
p
(s)
10
- 3
10
3
1
duty cycle = 1
0.75
0.5
0.33
0.2
0.1
0.05
0.02
0.01
0
FR4 PCB, mounting pad for collector 6 cm
2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
PBHV9040X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 5 / 14
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
= -320 V; I
E
= 0 A; T
amb
= 25 °C - - -100 nAI
CBO
collector-base cut-off
current
V
CB
= -320 V; I
E
= 0 A; T
j
= 150 °C - - -10 µA
I
CES
collector-emitter cut-off
current
V
CE
= -320 V; V
BE
= 0 V; T
amb
= 25 °C - - -100 nA
I
EBO
emitter-base cut-off
current
V
EB
= -4 V; I
C
= 0 A; T
amb
= 25 °C - - -100 nA
V
CE
= -10 V; I
C
= -50 mA; T
amb
= 25 °C 100 200 -
V
CE
= -10 V; I
C
= -100 mA;
T
amb
= 25 °C
80 200 -
h
FE
DC current gain
V
CE
= -10 V; I
C
= -250 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
10 25 -
V
CEsat
collector-emitter
saturation voltage
I
C
= -100 mA; I
B
= -20 mA;
T
amb
= 25 °C
- -110 -200 mV
V
BEsat
base-emitter saturation
voltage
I
C
= -100 mA; I
B
= -20 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- -1 -1.1 V
t
d
delay time - 9 - ns
t
r
rise time - 1810 - ns
t
on
turn-on time - 1819 - ns
t
s
storage time - 715 - ns
t
f
fall time - 1085 - ns
t
off
turn-off time
V
CC
= -2 V; I
C
= -0.15 A; I
Bon
= -0.03 A;
I
Boff
= 0.03 A; T
amb
= 25 °C
- 1800 - ns
f
T
transition frequency V
CE
= -10 V; I
C
= -10 mA; f = 100 MHz;
T
amb
= 25 °C
- 55 - MHz
C
c
collector capacitance V
CB
= -20 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 7 - pF
C
e
emitter capacitance V
EB
= -0.5 V; I
C
= 0 A; i
c
= 0 A;
f = 1 MHz; T
amb
= 25 °C
- 150 - pF
P1-P3P4-P6P7-P9P10-P12P13-P15

PBHV9040X,115

Mfr. #:
Buy PBHV9040X,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 500V 0.25A PNP high vltg low VCEsat tran
Lifecycle:
New from this manufacturer.
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