NXP Semiconductors
PBHV9040X
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
PBHV9040X All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 9 December 2013 7 / 14
006aab186
- 1
- 10
- 1
- 10
V
CEsat
(V)
- 10
- 2
I
C
(mA)
- 10
- 1
- 10
3
- 10
2
- 1 - 10
(1)
(2)
(3)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab187
- 1
- 10
- 1
- 10
V
CEsat
(V)
- 10
- 2
I
C
(mA)
- 10
- 1
- 10
3
- 10
2
- 1 - 10
(3)
(2)
(1)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig. 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab188
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
- 1
I
C
(mA)
10
- 1
- 10
3
- 10
2
- 1 - 10
(1)
(2)
(3)
I
C
/I
B
= 5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -55 °C
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
006aab189
10
1
10
3
10
2
10
4
R
CEsat
(Ω)
10
- 1
I
C
(mA)
10
- 1
- 10
3
- 10
2
- 1 - 10
(3)
(2)
(1)
T
amb
= 25 °C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values