April 2007 Rev 4 1/18
18
STGB6NC60HD - STGB6NC60HD-1
STGF6NC60HD - STGP6NC60HD
N-channel 600V - 7A - I
2
PAK / D
2
PAK / TO-220 / TO-220FP
Very fast PowerMESH™ IGBT
Features
Low on voltage drop (V
cesat
)
Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
High frequency operation
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advaced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) mantaining a low voltage drop.
Applications
High frequency inverters
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Internal schematic diagram
Type V
CES
V
CE(sat)
max
@25°C
I
C
@100°C
STGB6NC60HD
STGB6NC60HD-1
STGP6NC60HD
STGF6NC60HD
600V
600V
600V
600V
<2.5V
<2.5V
<2.5V
<2.5V
7A
7A
7A
3A
1
2
3
TO-220FPTO-220
1
2
3
1
3
D
²
PAK
1
2
3
I
2
PAK
www.st.com
Order codes
Part number Marking Package Packaging
STGB6NC60HDT4 GB6NC60HD D²PAK Tape & reel
STGB6NC60HD-1 GB6NC60HD I²PAK Tube
STGP6NC60HD GP6NC60HD TO-220 Tube
STGF6NC60HD GF6NC60HD TO-220FP Tube
Contents STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD
2/18
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STGB6NC60HD/-1 - STGP6NC60HD - STGF6NC60HD Electrical ratings
3/18
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
D²PAK/I²PAK/
TO-220
TO-220FP
V
CES
Collector-emitter voltage (V
GS
= 0)
600 V
I
C
(1)
1. Calculated according to the iterative formula::
Collector current (continuous) at T
C
= 25°C
15 6 A
I
C
(1)
Collector current (continuous) at T
C
= 100°C
73A
I
CM
(2)
2. Pulse width limited by max junction temperature
Collector current (pulsed) 21 A
V
GE
Gate-emitter voltage ±20 V
I
F
Diode RMS forward current at Tc=25°C 10 A
P
TOT
Total dissipation at T
C
= 25°C
56 20 W
V
ISO
Insulation withstand voltage A.C.(t=1sec;Tc=25°C) -- 2500
T
stg
Storage temperature
– 55 to 150 °C
T
j
Operating junction temperature
T
l
Maximum lead temperature for soldering purpose
(for 10sec. 1.6 mm from case)
300 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max
TO-220
D²PAK
I²PAK
C/W
TO-220FP C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
I
C
T
C
()
T
JMAX
T
C
R
THJ C
V
CESAT MAX()
T
C
I
C
,()×
------------------------------------------------------------------------------------------------------=

STGP6NC60H

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
IGBT 600V 15A 56W TO220
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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