STGP6NC60HD

Mfr. #:: STGP6NC60HD
Manufacturer:: STMicroelectronics
Description:: IGBT Transistors PowerMESH&#34 IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: STGP6NC60HD Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: STGP6NC60HD more Information STGP6NC60HD Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-220-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 600 V

Collector-Emitter Saturation Voltage:: 1.9 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 15 A

Pd - Power Dissipation:: 56 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: STGP6NC60HD

Packaging:: Tube

Continuous Collector Current Ic Max:: 15 A

Height:: 9.15 mm

Length:: 10.4 mm

Width:: 4.6 mm

Brand:: STMicroelectronics

Continuous Collector Current:: 7 A

Gate-Emitter Leakage Current:: 100 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 1000

Subcategory:: IGBTs

Unit Weight:: 0.211644 oz

Tags: STGP6N, STGP6, STGP, STG

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STGP6NC60HD Description

***-Wing Technology: STMICROELECTRONICS STGP6NC60HD IGBT Single Transistor, 15 A, 2.5 V, 56 W, 600 V, TO-220, 3 Pins

***ical: Trans IGBT Chip N-CH 600V 15A 62500mW 3-Pin(3+Tab) TO-220AB Tube

***SIT Distribution GmbH: Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 15A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 56W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ical: Trans IGBT Chip N-CH 600V 14A 56000mW 3-Pin(3+Tab) TO-220 Tube

***ure Electronics: STG Series Powermesh Low Turn Off Energy Through Hole IGBT - TO-220-2

***r Electronics: Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***icroelectronics: 6 A, 600 V hyper fast IGBT with Ultrafast diode

***ure Electronics: STGP10NC60HD Series N-Channel 600 V 10 A Very Fast IGBT Flange Mount - TO-220

***ical: Trans IGBT Chip N-CH 600V 20A 65000mW 3-Pin(3+Tab) TO-220AB Tube

***r Electronics: Insulated Gate Bipolar Transistor, 9A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 65W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ment14 APAC: IGBT, TO-220; DC Collector Current:20A; Collector Emitter Voltage Vces:2.5V; Power Dissipation Pd:65W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; SVHC:No SVHC (20-Jun-2011); Current Ic Continuous a Max:20A; Package / Case:TO-220; Power Dissipation Max:65W; Power Dissipation Pd:60W; Pulsed Current Icm:40A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

*** Source Electronics: Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(3+Tab) TO-220AB Tube / IGBT 600V 20A 65W TO220

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***nell: IGBT, TO-220; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Tem

***ical: Trans IGBT Chip N-CH 650V 18A 70000mW 3-Pin(3+Tab) TO-220 Tube

***ineon SCT: High Speed 650 V, hard-switching IGBT TRENCHSTOPTM 5 co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT, PG-TO220-3, RoHS

***nell: IGBT, 650V, 8A, TO220-3; DC Collector Current: 8A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 70W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Cas; Available until stocks are exhausted

***ineon: Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding

***ical: Trans IGBT Chip N-CH 600V 12A 88000mW Automotive 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IKP06N60T: 600V 12A Through Hole Low Loss DuoPack IGBT TrenchStop - PG-TO-220-3

***nsix Microsemi: Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB

***ment14 APAC: IGBT, N, 600V, 6A, TO-220; Collector Emitter Voltage Vces:2.05V; Power Dissipation Pd:88W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; Current Ic Continuous a Max:6A; No. of Transistors:1; Package / Case:TO-220; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

***ineon SCT: The 600 V, 6 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

***ical: Trans IGBT Chip N-CH 600V 12A 88000mW 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: IGP06N60T Series 600 V 12 A Through Hole Low Loss IGBT - PG-TO-220-3

***ineon SCT: Infineon's 600 V, 6 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO220-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled Diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar Inverters; Major Home Appliances; Welding; Air conditioning; Industrial Drives; Other hard switching applications

Market price

Part #	Mfg.	Description	Stock	Price
STGP6NC60HD DISTI # 33632704	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	1950	24:$0.4222
STGP6NC60HD DISTI # 497-5122-5-ND	STMicroelectronics	IGBT 600V 15A 56W TO220 RoHS: Compliant Min Qty: 1 Container: Tube	1992In Stock	5000:$0.5488 2500:$0.5762 500:$0.7820 100:$0.9467 50:$1.1524 10:$1.2140 1:$1.3600
STGP6NC60HD DISTI # V36:1790_06560719	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube RoHS: Compliant	0
STGP6NC60HD DISTI # STGP6NC60HD	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube (Alt: STGP6NC60HD) RoHS: Compliant Min Qty: 50 Container: Tube	Europe - 24000	500:€0.3949 300:€0.4259 200:€0.4609 100:€0.5029 50:€0.6149
STGP6NC60HD DISTI # STGP6NC60HD	STMicroelectronics	Trans IGBT Chip N-CH 600V 15A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: STGP6NC60HD) RoHS: Compliant Min Qty: 2000 Container: Tube	Americas - 0	20000:$0.4999 10000:$0.5109 6000:$0.5339 4000:$0.5599 2000:$0.5869
STGP6NC60HD DISTI # 26M3561	STMicroelectronics	IGBT, TO-220,DC Collector Current:15A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:56W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,Product Range:-,MSL:- RoHS Compliant: Yes	364	1000:$0.6350 500:$0.7850 100:$0.8780 10:$1.1200 1:$1.3000
STGP6NC60HD DISTI # 511-STGP6NC60HD	STMicroelectronics	IGBT Transistors PowerMESH&#34 IGBT RoHS: Compliant	1583	1:$1.2900 10:$1.1000 100:$0.8430 500:$0.7450 1000:$0.5880 2000:$0.5220 10000:$0.5020
STGP6NC60HD DISTI # 6868388	STMicroelectronics	TRANSISTOR IGBT N-CH 600V 15A TO220, PK	260	250:£0.6020 100:£0.6140 50:£0.7080 25:£0.8020 5:£1.0080
STGP6NC60HD DISTI # 1293649	STMicroelectronics	IGBT, TO-220 RoHS: Compliant	364	10000:$0.7730 2000:$0.8030 1000:$0.9040 500:$1.1500 100:$1.3000 10:$1.7000 1:$1.9800
STGP6NC60HD DISTI # 1293649	STMicroelectronics	IGBT, TO-220	384	500:£0.5870 250:£0.6240 100:£0.6620 25:£0.8650 5:£0.9590
STGP6NC60HD DISTI # XSKDRABS0026166	STMicroelectronics	InsulatedGateBipolarTransistor,15AI(C),600VV(BR)CES,N-Channel RoHS: Compliant	19200 in Stock0 on Order	19200:$0.5828 1350:$0.6245
STGP6NC60HD	STMicroelectronics	Insulated Gate Bipolar Transistor, 15A I(C), 600V V(BR)CES, N-Channel, TO-220AB RoHS: Compliant	Europe - 47000
STGP6NC60HD DISTI # TMOSP8645	STMicroelectronics	IGBT600V15A2.5VTO220-3	Stock DE - 0Stock HK - 0Stock US - 0	50:$0.5494 100:$0.5156 200:$0.5071 400:$0.4987 700:$0.4691
STGP6NC60HD DISTI # STGP6NC60HD	STMicroelectronics	600V 15A 56W TO220 RoHS: Not Compliant	680	10:€0.7800 50:€0.4800 200:€0.3800 500:€0.3700
STGP6NC60HD	STMicroelectronics	15A,600V fast IGBT with Ultrafast diode	32	1:$0.6400 100:$0.5700 500:$0.5400 1000:$0.4900

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STGP6NC60HD

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes