STGP6

STGP6M65DF2 vs STGP6NC60HD vs STGP6NC60H

 
PartNumberSTGP6M65DF2STGP6NC60HDSTGP6NC60H
DescriptionIGBT Transistors PTD HIGH VOLTAGEIGBT Transistors PowerMESH&#34 IGBTIGBT 600V 15A 56W TO220
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-220-3TO-220-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max650 V600 V-
Collector Emitter Saturation Voltage1.55 V1.9 V-
Maximum Gate Emitter Voltage20 V20 V-
Continuous Collector Current at 25 C12 A15 A-
Pd Power Dissipation88 W56 W-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 150 C-
SeriesSTGP6M65DF2STGP6NC60HD-
Continuous Collector Current Ic Max12 A15 A-
BrandSTMicroelectronicsSTMicroelectronics-
Gate Emitter Leakage Current+/- 250 uA100 nA-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity10001000-
SubcategoryIGBTsIGBTs-
Unit Weight0.063493 oz0.211644 oz-
Packaging-Tube-
Height-9.15 mm-
Length-10.4 mm-
Width-4.6 mm-
Continuous Collector Current-7 A-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STGP6M65DF2 IGBT Transistors PTD HIGH VOLTAGE
STGP6NC60HD IGBT Transistors PowerMESH&#34 IGBT
STGP6NC60HD IGBT 600V 15A 56W TO220
STGP6M65DF2 TRENCH GATE FIELD-STOP IGBT M SE
STGP6NC60H IGBT 600V 15A 56W TO220
STGP6N60HD New and Original
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