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BUK7107-40ATC,118
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BUK7107-40ATC_2
© NXP B.V
. 2009. All rights rese
rved.
Product data sheet
Rev
. 02 — 6 February 2009
9 of 15
NXP Semiconductors
BUK7107-40A
TC
N-channel T
renchPLUS st
andard level FET
Fig 9.
Gate-sour
ce threshold voltage as a function
of
junction temperature
Fig 10.
Sub-threshold
drain current as a fu
nction of
gate-source v
oltage
Fig 11.
Forward transconduc
tance as a function o
f
drain cu
rrent; typica
l values
Fig
12.
Input, output and reverse transfer cap
acitances
as a function of
drain-source voltage
; typical
values
T
j
(
°
C)
−
60
180
120
06
0
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03aa35
V
GS
(V)
06
4
2
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
03ni68
0
20
40
60
80
0
2
04
0
6
08
0
1
0
0
I
D
(A)
(S)
g
fs
03ni69
0
2000
4000
6000
8000
10
-2
10
-1
1
10
10
2
V
DS
(V
)
C
(pF
)
C
iss
C
oss
C
rss
BUK7107-40ATC_2
© NXP B.V
. 2009. All rights rese
rved.
Product data sheet
Rev
. 02 — 6 February 2009
10 of 15
NXP Semiconductors
BUK7107-40A
TC
N-channel T
renchPLUS st
andard level FET
Fig 13.
T
ransfer characteristics: drain current as a
function of gate-source voltag
e; typical values
Fig 14.
G
ate-source voltage as a fun
ction of turn-on
gate charge; typical values
Fig 15.
Drain
-source clamping voltag
e as a function of
drain cu
rrent; typica
l values
Fig 16.
Drain
-source clamping voltag
e as a function of
gate-source c
urren
t; typical values
03ni70
0
20
40
60
80
100
120
0246
V
GS
(V)
(A)
175
°
C
T
j
= 25
°
C
I
D
03ni71
0
2
4
6
8
10
0
40
80
120
Q
G
(nC)
V
GS
(V)
14 V
V
DS
= 32 V
03ni61
49
50
51
52
02
468
1
0
I
D
(A
)
V
DSR
(CL
)
(V
)
175
°
C
T
j
= 25
°
C
- 55
°
C
03ni62
40
44
48
52
56
0123
-I
GS
(C
L)
(mA
)
V
DSR
(CL
)
(V
)
175
°
C
T
j
= 25
°
C
55
°
C
-
BUK7107-40ATC_2
© NXP B.V
. 2009. All rights rese
rved.
Product data sheet
Rev
. 02 — 6 February 2009
1
1 of 15
NXP Semiconductors
BUK7107-40A
TC
N-channel T
renchPLUS st
andard level FET
Fig
17.
Forward v
oltage of temperature
sense diode
as
a function of junction temperature; typical
values
Fig 18.
T
emperature coefficient of tempera
ture sense
diode as a fun
ction of forward voltage
; typical
values
Fig 19.
R
everse diode current
as a function of reverse diod
e voltage; typical valu
es
T
j
(
°
C)
0
200
150
50
100
03ne84
500
600
700
V
F
(mV)
400
03ne85
V
F
(mV)
645
675
665
655
−
1.50
−
1.60
−
1.70
S
F
(mV/K)
−
1.40
max
typ
min
03ni72
0
20
40
60
80
100
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(V)
(A)
T
j
= 25
°
C
175
°
C
I
S
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P16
BUK7107-40ATC,118
Mfr. #:
Buy BUK7107-40ATC,118
Manufacturer:
Nexperia
Description:
MOSFET TRENCHPLUS MOSFET
Lifecycle:
New from this manufacturer.
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BUK7107-40ATC,118