BUK7107-40ATC_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 6 February 2009 3 of 15
NXP Semiconductors
BUK7107-40ATC
N-channel TrenchPLUS standard level FET
4. Limiting values
[1] Voltage is limited by clamping.
[2] Current is limited by power dissipation chip rating.
[3] Continuous current is limited by package.
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C; [1] -40V
V
DGS
drain-gate voltage I
DG
= 250 µA - 40 V
V
GS
gate-source voltage -20 20 V
I
D
drain current T
mb
=25°C; V
GS
=10V; see Figure 2;
see Figure 3;
[2] - 140 A
[3]
-75A
T
mb
=100°C; V
GS
= 10 V; see Figure 2 [3] -75A
I
DM
peak drain current T
mb
=25°C; t
p
≤ 10 µs; pulsed; see Figure 3 - 560 A
P
tot
total power dissipation T
mb
=25°C; see Figure 1 - 272 W
I
DG(CL)
drain-gate clamping
current
pulsed; t
p
=5ms; δ =0.01 - 50 mA
I
GS(CL)
gate-source clamping
current
continuous - 10 mA
pulsed; t
p
=5ms; δ =0.01 - 50 mA
V
isol(FET-TSD)
FET to temperature
sense diode isolation
voltage
-100 100 V
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C; [2] - 140 A
T
mb
=25°C; [3] -75A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
= 25 °C - 560 A
Clamping
E
DS(CL)S
non-repetitive
drain-source clamping
energy
I
D
=75A; V
DS
≤ 40 V; V
GS
=10V; R
GS
=10kΩ;
unclamped; T
j(init)
=25°C
-1.4J
Electrostatic Discharge
V
esd
electrostatic discharge
voltage
HBM; C = 100 pF; R = 1.5 kΩ -6kV