OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NCV7708BDWR2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NCV7708B
http://onsemi.com
4
MAXIMUM RATINGS
Rating Value Unit
Power Supply Voltage (VS1, VS2)
(DC)
(AC), t < 500 ms, Ivsx > −2 A
−0.3 to 40
−1.0
V
Output Pin OUTHx
(DC)
(AC – inductive clamping)
−0.3 to 40
−8.0
V
Output Pin OUTLx
(DC)
(AC), t < 500 ms, IOUTLx > −2 A
(AC Inductive Clamping)
−0.3 to 34
−1.0
48
V
Pin Voltage (Logic Input pins, SI, SCLK, CSB, SO, EN, V
CC
) −0.3 to 7.0 V
Output Current (OUTL1, OUTL2, OUTL3, OUTL4, OUTL5, OUTL6, OUTH1, OUTH2, OUTH3, OUTH4,
OUTH5, OUTH6)
(DC) Vds = 12 V
(DC) Vds = 20 V
(DC) Vds = 40 V
(AC) Vds = 12 V, (50 ms pulse, 1 s period)
(AC) Vds = 20 V, (50 ms pulse, 1 s period)
(AC) Vds = 40 V, (50 ms pulse, 1 s period)
−1.5 to 1.5
−0.7 to 0.7
−0.25 to 0.25
−2.0 to 2.0
−0.9 to 0.9
−0.3 to 0.3
A
Electrostatic Discharge, Human Body Model, VS1, VS2, OUTx 4.0 kV
Electrostatic Discharge, Human Body Model, all other pins 2.0 kV
Electrostatic Discharge, Machine Model 200 V
Electrostatic Discharge, Charged Device Model 1.0 kV
Operating Junction Temperature −40 to 150 °C
Storage Temperature Range −55 to 150 °C
Moisture Sensitivity Level MSL 3 −
Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C (Note 1) 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. For additional information, please see or download the ON Semiconductor Soldering and Mounting Techniques Reference Manual,
SOLDERRM/D.
RECOMMENDED OPERATING CONDITIONS
Rating
Value
Unit
Min Max
Digital Supply Input Voltage (V
CC
) 3.0 5.5 V
Battery Supply Input Voltage (V
S
) 5.1 28 V
DC Output Current (D
x
, S
x
) − 0.5 A
Junction Temperature (T
J
) −40 125 °C
THERMAL CONDITIONS
Thermal Parameters
Test Conditions, Typical Value
Unit
min−pad board (Note 2) 1,−pad board (Note 3)
Junction−to−Lead (psi−JL8, Y
JL8
) or Pins 6−9, 20−23
10 11 °C/W
Junction−to−Ambient (R
q
JA
, q
JA
)
73 56 °C/W
2. 1−oz copper, 240 mm
2
copper area, 0.062″ thick FR4.
3. 1−oz copper, 986 mm
2
copper area, 0.062″ thick FR4.
NCV7708B
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS
(−40°C < T
J
< 150°C, 5.5 V < VSx < 40 V, 3 V < V
CC
< 5.25 V, EN = V
CC
, unless otherwise specified)
Characteristic
Test Conditions Min Typ Max Unit
GENERAL
Supply Current (VS1 + VS2)
Sleep Mode (Note 5)
VS1 = VS2 = 13.2 V, V
CC
= CSB = 5 V,
EN = SI = SCLK = 0 V (−40°C to 85°C)
− 1.0 5.0
mA
Supply Current (VS1)
Active Mode
EN = V
CC
, 5.5 V < VSx < 35 V
No Load
− 2.0 4.0 mA
Supply Current (V
CC
) − Sleep Mode (Note 5) CSB = V
CC
, EN = SI = SCLK = 0 V
(−40°C to 85°C)
− 1.0 2.5
mA
Supply Current (V
CC
) − Active Mode EN = CSB = V
CC
, SI = SCLK = 0 V − 1.5 3.0 mA
Supply Current (VS2)
Active Mode
EN = V
CC
, 5.5 V < VSx < 35 V
No Load
− 0.5 1.0 mA
V
CC
Power−On−Reset Threshold 2.60 2.80 3.00 V
VSx Undervoltage Detection Threshold VSx decreasing 4.2 4.6 5.1 V
VSx Undervoltage Detection Hysteresis 100 − 400 mV
VSx Overvoltage Detection Threshold VSx increasing 35.0 37.5 40.0 V
VSx Overvoltage Detection Hysteresis 1.5 3.5 5.5 V
Thermal Warning (Note 4) 120 145 170 °C
Thermal Warning Hysteresis (Note 4) − 30 − °C
Thermal Shutdown (Note 4) 155 175 195 °C
Ratio of Thermal Shutdown to Thermal Warning (Note 4) 1.05 1.20 − −
OUTPUTS
Output High R
DSon
(source) I
out
= −500 mA
8 V < Vs < 40 V
8 V < Vs < 40 V, T = 25°C
5.5 V < Vs ≤ 8 V
5.5 V < Vs ≤ 8 V, T = 25°C
−
−
−
−
−
0.8
−
1.3
1.8
1.0
2.2
−
W
Output Low R
DSon
(sink) I
out
= 500 mA
8 V < Vs < 40 V
8 V < Vs < 40 V, T = 25°C
5.5 V < Vs ≤ 8 V
5.5 V < Vs ≤ 8 V, T = 25°C
−
−
−
−
−
0.8
−
1.3
1.8
1.0
2.2
−
W
Source Leakage Current OUTH(1−6) = 0 V, VSx = 40 V, V
CC
= 5 V
OUTH(1−6) = 0 V, Vsx = 13.2 V, V
CC
= 5V
−5.0
−1.0
−
−
−
−
mA
Sink Leakage Current OUTL(1−6) = 34 V, V
CC
= 5 V
OUTL(1−6) = 34 V, V
CC
= 5 V, T = 25°C
−
−
−
−
5.0
1.0
mA
Overcurrent Shutdown Threshold (OUTHx) V
CC
= 5 V, Vsx = 13.2 V −1.9 −1.45 −1.0 A
Current Limit (OUTHx) V
CC
= 5 V, Vsx = 13.2 V −5.0 −3.0 −2.0 A
Overcurrent Shutdown Threshold (OUTLx) V
CC
= 5 V, Vsx = 13.2 V 1.0 1.45 1.9 A
Overcurrent Shutdown Delay Time − Source
Overcurrent Shutdown Delay Time − Sink
V
CC
= 5 V, Vsx = 13.2 V 10
10
25
25
50
50
ms
4. Thermal characteristics are not subject to production test.
5. For temperatures above 85°C, refer to graphs for VSx and V
CC
Sleep Current vs. Temperature on page 13.
6. Refer to “Typical High−Side Negative Clamp Voltage” graph on page 13.
7. Not production tested.
NCV7708B
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS
(−40°C < T
J
< 150°C, 5.5 V < VSx < 40 V, 3 V < V
CC
< 5.25 V, EN = V
CC
, unless otherwise specified)
Characteristic UnitMaxTypMinTest Conditions
OUTPUTS
Current Limit (OUTLx)
V
CC
= 5 V, Vsx = 13.2 V 2.0 3.0 5.0 A
Under Load Detection Threshold (OUTLx) V
CC
= 5 V, Vsx = 13.2 V 3.0 8.0 15 mA
Under Load Detection Threshold (OUTHx) V
CC
= 5 V, Vsx = 13.2 V −15 −6.0 −2.0 mA
Under Load Detection Delay Time V
CC
= 5 V, Vsx = 13.2 V 200 350 600
ms
Power Transistor Body Diode Forward Voltage I
F
= 500 mA − 0.9 1.3 V
High−Side Clamping Voltage (Note 6) I(OUTHx) = −50 mA − − −0.7 V
Low−Side Clamping Voltage I(OUTLx) = 50 mA 34 − 48 V
Low−Side Clamping Energy I(OUTLx) = 0.6 A, T
A
= 25°C, DC = 0.5% − − 15 mJ
Logic Inputs (EN, SI, SCLK, CSB)
Input Threshold − High
Input Threshold − Low
−
30
−
−
70
−
%V
CC
Input Hysteresis 100 300 600 mV
Input Pulldown Current (EN, SI, SCLK)
Sleep Mode (SI, SCLK)
EN = SI = SCLK = V
CC
EN = 0, SI = SCLK = V
CC
5.0
10
10
50
50
100
mA
Input Pullup Current (CSB)
Sleep Mode
CSB = 0 V, EN = V
CC
EN = 0 V, V
CC
= 5 V
−50
−100
−10
−50
−5.0
−10
mA
Input Capacitance (Note 7) − 10 15 pF
Logic Output (SO)
Output High
I
out
= 1 mA V
CC
– 1.0 V
CC
– 0.7 − V
Output Low I
out
= −1.6 mA − 0.2 0.4 V
Tri−state Leakage CSB = V
CC
, 0 V < SO < V
CC
−10 − 10
mA
Tri−state Input Capacitance (Note 7) CSB = V
CC
, 0 V < V
CC
< 5.25 V − 10 15 pF
Timing Specifications
High Side Turn On Time
Vs = 13.2 V, R
load
= 25 W
− 7.5 13
ms
High Side Turn Off Time
Vs = 13.2 V, R
load
= 25 W
− 3.0 6.0
ms
Low Side Turn On Time
Vs = 13.2 V, R
load
= 25 W
− 6.5 13
ms
Low Side Turn Off Time
Vs = 13.2 V, R
load
= 25 W
− 2.0 5.0
ms
High Side Rise Time
Vs = 13.2 V, R
load
= 25 W
− 4.0 8.0
ms
High Side Fall Time
Vs = 13.2 V, R
load
= 25 W
− 2.0 3.0
ms
Low Side Rise Time
Vs = 13.2 V, R
load
= 25 W
− 1.0 2.0
ms
Low Side Fall Time
Vs = 13.2 V, R
load
= 25 W
− 1.0 3.0
ms
Non−Overlap Time High Side Turn Off To Low Side Turn On 1.5 − −
ms
Non−Overlap Time Low Side Turn Off To High Side Turn On 1.5 − −
ms
4. Thermal characteristics are not subject to production test.
5. For temperatures above 85°C, refer to graphs for VSx and V
CC
Sleep Current vs. Temperature on page 13.
6. Refer to “Typical High−Side Negative Clamp Voltage” graph on page 13.
7. Not production tested.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

NCV7708BDWR2G

Mfr. #:
Buy NCV7708BDWR2G
Manufacturer:
ON Semiconductor
Description:
Motor / Motion / Ignition Controllers & Drivers HALF BRIDGE DRIVER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet