Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IRGB20B60PD1PBF
P1-P3
P4-P6
P7-P9
P10-P11
IRGB20B60PD1PbF
4
www.irf.com
Fig. 8
- Typical V
CE
vs. V
GE
T
J
= 25°C
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= 125°C
Fig. 12
- Typ. Switching Time vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 10
Ω
; V
GE
= 15V.
Diode clamp used: 8ETH06 (See C.T.3)
Fig. 11
- Typ. Energy Loss vs. I
C
T
J
= 125°C; L = 200µH; V
CE
= 390V, R
G
= 10
Ω
; V
GE
= 15V.
Diode clamp used: 8ETH06 (See C.T.3)
Fig. 10
- Typ. Diode Forward Characteristics
tp = 80µs
0
5
10
15
20
V
GE
(V)
0
50
100
150
200
250
300
350
400
450
I
C
E
(
A
)
T
J
= 25°
C
T
J
= 125°
C
Fig. 7
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
0
5
10
15
20
V
GE
(V)
0
1
2
3
4
5
6
7
8
9
10
V
C
E
(
V
)
I
CE
= 20A
I
CE
= 13A
I
CE
= 8.
0A
0
5
10
15
20
V
GE
(V)
0
1
2
3
4
5
6
7
8
9
10
V
C
E
(
V
)
I
CE
= 20A
I
CE
= 13A
I
CE
= 8.
0A
0
5
10
15
20
25
I
C
(A)
0
50
100
150
200
250
300
350
E
n
e
r
g
y
(
µ
J
)
E
OFF
E
ON
0
5
10
15
20
25
I
C
(A)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0.1
1
10
100
0.0
1.0
2.0
3.0
4.0
5.0
6.0
FM
Forward Voltage D
rop - V (V
)
T = 150°C
T = 125°C
T = 25
°C
J
J
J
Instantaneous
Forward
Current
-
I
F
( A
)
IRGB20B60PD1PbF
www.irf.com
5
Fig. 14
- Typ. Switching Time vs. R
G
T
J
= 125°C; L = 200µH; V
CE
= 390V, I
CE
= 13A; V
GE
= 15V
Diode clamp used: 8ETH06 (See C.T.3)
Fig. 13
- Typ. Energy Loss vs. R
G
T
J
= 125°C; L = 200
µH
; V
CE
= 390V, I
CE
= 13A; V
GE
= 15V
Diode clamp used: 8ETH06 (See C.T.3)
Fig. 16
- Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
Fig. 15
- Typ. Output Capacitance
Stored Energy vs. V
CE
Fig. 17
- Typical Gate Charge
vs. V
GE
I
CE
= 13A
0
5
10
15
20
25
30
35
R
G
(
Ω
)
50
100
150
200
250
E
n
e
r
g
y
(
µ
J
)
E
ON
E
OFF
0
10
20
30
40
R
G
(
Ω
)
1
10
100
1000
S
w
i
c
h
i
n
g
T
i
m
e
(
n
s
)
t
R
td
OFF
t
F
td
ON
0
20
40
60
80
100
V
CE
(V)
10
100
1000
10000
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Cies
Coes
Cres
0
1
02
03
04
0
5
06
0
7
08
0
Q
G
, Tota
l Ga
te Ch
arg
e (n
C)
0
2
4
6
8
10
12
14
16
V
G
E
(
V
)
400V
0
100
200
300
400
500
600
700
V
CE
(V)
0
2
4
6
8
10
12
E
o
e
s
(
µ
J
)
Fig. 18
- Normalized Typical V
CE(on)
vs.
Junction Temperature
I
CE
= 13A; V
GE
= 15V
-50
0
50
100
150
200
T
J
, Junct
ion T
emperat
ure (°
C)
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
N
o
r
m
a
l
i
z
e
d
V
C
E
(
o
n
)
(
V
)
IRGB20B60PD1PbF
6
www.irf.com
Fig.
20
-
Typical
Recovery
Current
vs.
di
f
/dt
Fig.
19
-
Typical
Reverse
Recovery
vs.
di
f
/dt
Fig. 21
- Typical
Stored
Charge
vs. di
f
/dt
Fig. 22
- Typical
di
(rec)M
/dt
vs. di
f
/dt,
trr- (nC)
20
25
30
35
40
45
50
100
1000
f
di /dt - (A
/µs)
I = 8.0A
I =
4.
0A
F
F
V =
200V
T = 125°C
T = 25°C
R
J
J
Irr- ( A)
0
2
4
6
8
10
12
14
100
1000
f
I =
8.
0A
I =
4.0
A
V = 20
0V
T =
125°
C
T = 25°C
R
J
J
di /dt - (A
/µ
s)
F
F
Qrr-
(nC)
0
40
80
120
160
200
100
1000
f
di /dt - (A
/µs)
I = 8.0A
I =
4.0
A
V
= 200V
T = 1
25°C
T = 25°C
R
J
J
F
F
di
(rec) M/dt
-
(A
/µs)
100
1000
100
1000
f
di /dt - (A
/µs
)
A
I = 8.0A
I = 4.0A
V = 20
0V
T =
125°
C
T = 25°C
R
J
J
F
F
P1-P3
P4-P6
P7-P9
P10-P11
IRGB20B60PD1PBF
Mfr. #:
Buy IRGB20B60PD1PBF
Manufacturer:
Infineon Technologies
Description:
IGBT Transistors 600V Warp2 150kHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IRGB20B60PD1PBF
