NXP Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation triacs in SYMBOL PARAMETER MAX. UNIT
a plastic envelope suitable for surface
mounting, intended for use in motor control BTA216B- 600D
circuits or with other highly inductive loads. BTA216B- 600E
These devices balance the requirements of V
DRM
BTA216B- 600F V
commutation performance and gate Repetitive peak off-state 600
sensitivity. The "sensitive gate" E series and I
T(RMS)
voltages A
"logic level" D series are intended for I
TSM
RMS on-state current 16 A
interfacing with low power drivers, including Non-repetitive peak on-state 140
micro controllers. current
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
Repetitive peak off-state - 600
1
V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 16 A
T
mb
≤ 99 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ˚C prior to
surge -
t = 20 ms - 140 A
t = 16.7 ms 150 A
I
2
tI
2
t for fusing t = 10 ms - 98 A
2
s
dI
T
/dt Repetitive rate of rise of I
TM
= 20 A; I
G
= 0.2 A; 100 A/µs
on-state current after dI
G
/dt = 0.2 A/
µs
triggering
I
GM
Peak gate current - 2 A
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
13
mb
2
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
April 2002 1 Rev 2.000
