NXP Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
R
th j-a
Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA216B- ...D ...E ...F
I
GT
Gate trigger current
2
V
D
= 12 V; I
T
= 0.1 A
T2+ G+ - 5 10 25 mA
T2+ G- - 5 10 25 mA
T2- G- - 5 10 25 mA
I
L
Latching current V
D
= 12 V; I
GT
= 0.1 A mA
T2+ G+ - 15 25 30 mA
T2+ G- - 25 30 40 mA
T2- G- - 25 30 40
I
H
Holding current V
D
= 12 V; I
GT
= 0.1 A - 15 25 30 mA
...D, E, F
V
T
On-state voltage I
T
= 20 A - 1.5 V
V
GT
Gate trigger voltage V
D
= 12 V; I
T
= 0.1 A - 1.5 V
V
D
= 400 V; I
T
= 0.1 A; 0.25 - V
T
j
= 125 ˚C
I
D
Off-state leakage current V
D
= V
DRM(max)
; T
j
= 125 ˚C - 0.5 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA216B- ...D ...E ...F
dV
D
/dt Critical rate of rise of V
DM
= 67% V
DRM(max)
;306070-V/µs
off-state voltage T
j
= 110 ˚C; exponential
waveform; gate open circuit
dI
com
/dt Critical rate of change of V
DM
= 400 V; T
j
= 125 ˚C; 2.5 6.2 18 - A/ms
commutating current I
T(RMS)
= 16 A;
dV
com
/dt = 10V/µs; gate
open circuit
dI
com
/dt Critical rate of change of V
DM
= 400 V; T
j
= 125 ˚C; 12 20 50 - A/ms
commutating current I
T(RMS)
= 16 A;
dV
com
/dt = 0.1V/µs; gate
open circuit
2 Device does not trigger in the T2-, G+ quadrant.
April 2002 2 Rev 2.000