©2002 Fairchild Semiconductor Corporation RFD4N06L, RFD4N06LSM Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD4N06L
RFD4N06LSM UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
60 V
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
60 V
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±1
0V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
4A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
10 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derated above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30
0.20
W
W/
o
C
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
-55 to 175
o
C
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BV
DSS
I
D
= 1mA, V
GS
= 0V 60 - - V
Gate to Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250
µ
A 1 - 2.5 V
Zero Gate Voltage Drain Current I
DSS
T
C
= 25
o
C, V
DS
= 50V, V
GS
= 0V - - 1
µ
A
T
C
= 125
o
C, V
DS
= 50V, V
GS
= 0V - - 50
µ
A
Gate to Source Leakage Current I
GSS
V
GS
= ±10V, V
DS
= 0V - - ±100 nA
Drain to Source On Voltage (Note 2) V
DS(ON)
I
D
= 1A, V
GS
= 5V - - 0.8 V
I
D
= 2A, V
GS
= 5V - - 2.0 V
I
D
= 4A, V
GS
= 7.5V - - 4.0 V
Drain to Source On Resistance (Note 2) r
DS(ON)
I
D
= 1A, V
GS
= 5V - - 0.600
Ω
Forward Transconductance (Note 2) V
(plateau)
V
DS
= 15V, I
D
= 4A - - 4.5 V
Turn-On Delay Time t
d(ON)
V
DD
= 30V, I
D
= 1A, R
GS
= 6.25
Ω,
V
GS
= 5V
- - 20 ns
Rise Time t
r
- - 130 ns
Turn-Off Delay Time t
d(OFF)
- - 40 ns
Fall Time t
f
- - 160 ns
Total Gate Charge
(Gate to Source + Gate to Drain)
Q
g(TOT)
V
GS
= 0-10V V
DD
= 48V,
I
D
= 2A,
R
L
= 24
Ω
--8nC
Gate Charge at 5V Q
g(5)
V
GS
= 0-5V - - 5 nC
Threshold Gate Charge Q
g(TH)
V
GS
= 0-1V - - 1 nC
Thermal Resistance Junction to Case R
θ
JC
--5
o
C/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) V
SD
I
SD
= 1A - - 1.4 V
Reverse Recovery Time t
rr
I
SD
= 2A, dI
SD
/dt = 100A/
µ
s - 150 - ns
NOTES:
2. Pulsed: pulse duration = 300
µ
s max, duty cycle = 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
RFD4N06L, RFD4N06LSM
