RFD4N06LSM9A

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

600 mOhms

Vgs - Gate-Source Voltage:

10 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

30 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.39 mm

Length:

6.73 mm

Transistor Type:

1 N-Channel

Type:

MOSFET

Width:

6.22 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

160 ns

Product Type:

MOSFET

Rise Time:

130 ns

Factory Pack Quantity:

750

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

40 ns

Typical Turn-On Delay Time:

20 ns

Unit Weight:

0.139332 oz

Tags

RFD4N06LS, RFD4N, RFD4, RFD