SSM3K329R
2014-03-01
1
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM3K329R
○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.8-V drive
• Low ON-resistance: R
DS(ON)
= 289 mΩ (max) (@V
GS
= 1.8 V)
: R
DS(ON)
= 170 mΩ (max) (@V
GS
= 2.5 V)
: R
DS(ON)
= 126 mΩ (max) (@V
GS
= 4.0 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage V
DSS
30 V
Gate-source voltage V
GSS
±12 V
DC I
D
(Note 1) 3.5
Drain current
Pulse I
DP
(Note 1) 7.0
A
P
D
(Note 2)
1
Power dissipation
t = 10s 2
W
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
2
)
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Thermal resistance R
th (ch-a)
and Power dissipation P
D
vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-3Z1A
Weight: 11 mg (typ.)
1: Gate
2: Source
3: Drain
SOT-23F
Start of commercial production
2010-02
