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SSM3K329R,LF

P1-P3P4-P6P7-P7
SSM3K329R
2014-03-01
4
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
V
th
– Ta
Gate threshold voltage V
th
(V)
1.0
0
−50 0 15050 100
R
DS (ON)
– Ta
Drain–source ON-resistance
R
DS (ON)
(mΩ)
0
−50 0 50 150
200
100
400
Drain–source ON-resistance
R
DS (ON)
(mΩ)
0
Gate–source voltage V
GS
(V)
4
0
R
DS (ON)
– V
GS
400
200
12
− 25 °C
Ta = 100 °C
25 °C
0.5
Common Source
V
DS
= 3 V
I
D
= 1 mA
Common Source
Pulse test
I
D
= 0.5 A / V
GS
= 1.8 V
0.8 A / 2.5 V
300
100
300
100
8
1.0 A / 4.0 V
2 6 10
Drain–source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
0
6
0
0.2
0.4 0.6
4
10 V
2
4.0 V
V
GS
= 1.8 V
7
0.8 1.0
2.5 V
Common Source
Ta = 25 °C
Pulse test
5
3
1
Gate–source voltage V
GS
(V)
I
D
– V
GS
Drain current I
D
(A)
R
DS (ON)
– I
D
Drain current I
D
(A)
Drain–source ON-resistance
R
DS (ON)
(mΩ)
0 1
2
5
0
400
200
7
300
100
3 4
6
V
GS
= 4.0V
2.5 V
Common Source
Ta = 25°C
Pulse test
1.8 V
10
0
1
0.01
0.1
0.001
2.0
− 25 °C
Ta = 100 °C
25 °C
1.0
Common Source
V
DS
= 3 V
Pulse test
1.5 V
I
D
=1.0A
Common Source
Pulse test
SSM3K329R
2014-03-01
5
Drain–source voltage V
DS
(V)
C – V
DS
Capacitance C (pF)
1
0.1 1 10 100
10
100
30
50
3
5
Common Source
Ta = 25°C
f = 1 MHz
V
GS
= 0 V
Drain current I
D
(A)
Switching time t (ns)
t – I
D
1
0.01
100
0.1
1000
1 10
10
t
f
t
on
t
r
Common Source
V
DD
= 15 V
V
GS
= 0 to 2.5 V
Ta = 25 °C
R
G
= 4.7 Ω
t
off
C
iss
C
oss
C
rss
500
300
1000
Drain current I
D
(A)
Forward transfer admittance
⎪
Y
fs
⎪
(S)
|Y
fs
| – I
D
0.001
10
0.1
0.01
1
1
0.01
0.001
10
0.1
Common Source
V
DS
= 3 V
Ta = 25°C
Pulse test
Drain current I
DR
(A)
Drain–source voltage V
DS
(V)
I
DR
– V
DS
10
0
0.1
1
0.001
0.01
–0.5 –1.0 –1.5
−25 °C
Ta =100 °C
25 °C
Common Source
V
GS
= 0 V
Pulse test
G
D
S
I
DR
Gate–source voltage V
GS
(V)
0
0 2
4
8
10
6
2
V
DD
= 24 V
4 1 3
Common Source
I
D
= 2.0 A
Ta = 25°C
V
DD
= 15 V
Total Gate Charge Q
g
(nC)
Dynamic Input Characteristic
SSM3K329R
2014-03-01
6
Pulse width t
w
(s)
r
th
– t
w
Transient thermal impedance r
th
(°C/W )
0.001 10000.01 0.1 1 100
10
100
1000
1
10
Single pulse
a. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
2
)
b. Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.72 mm
2
×3)
b
a
Ambient temperature Ta (°C)
P
D
– Ta
Power dissipation P
D
(mW)
1600
0
400
120100 140
800
160 80 60 40 20 0 -20 -40
a
1200
a: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6 mm , Cu Pad : 645 mm
2
)
b: Mounted on FR4 board
(25.4mm × 25.4mm × 1.6 mm , Cu Pad : 0.72 mm
2
×3)
b
P1-P3P4-P6P7-P7

SSM3K329R,LF

Mfr. #:
Buy SSM3K329R,LF
Manufacturer:
Toshiba
Description:
MOSFET SM Sig N-CH MOS 30V 3.5A 12V VGSS
Lifecycle:
New from this manufacturer.
Delivery:
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