SI5513DC-T1-E3

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Document Number: 71186
S10-0547-Rev. G, 08-Mar-10
Vishay Siliconix
Si5513DC
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
T
J
= 150 °C
T
J
= 25 °C
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
- 0.6
- 0.4
- 0.2
0.0
0.2
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.05
0.10
0.15
0.20
012345
I
D
= 3.1 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
30
50
10
20
Power (W)
Time (s)
40
1 100 6001010
-1
10
-2
10
-4
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
1 10 60010
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Document Number: 71186
S10-0547-Rev. G, 08-Mar-10
www.vishay.com
5
Vishay Siliconix
Si5513DC
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Output Characteristics
On-Resistance vs. Drain Current
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
GS
= 5 V thru 4 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
1.5 V
2 V
2.5 V
3 V
3.5 V
- On-Resistance (Ω)R
DS(on)
0.0
0.1
0.2
0.3
0.4
0246810
I
D
- Drain Current (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
= 3.6 V
Transfer Characteristics
Capacitance
0
2
4
6
8
10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
T
C
= - 55 °C
125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C - Capacitance (pF)
0
100
200
300
400
500
600
048121620
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Document Number: 71186
S10-0547-Rev. G, 08-Mar-10
Vishay Siliconix
Si5513DC
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0
V
DS
= 10 V
I
D
= 2.1 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
J
= 150 °C
10
1
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 25 °C
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 2.1 A
T
J
- Junction Temperature (°C)
R
DS(on)
- On-Resistance
(Normalized)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
012345
I
D
= 2.1 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
30
50
10
20
Power (W)
Time (s)
40
1 100 6001010
-1
10
-2
10
-4
10
-3

SI5513DC-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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