SI5513DC-T1-E3

Mfr. #:: SI5513DC-T1-E3
Manufacturer:: Vishay / Siliconix
Description:: MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
Lifecycle:: New from this manufacturer.
Datasheet:: SI5513DC-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI5513DC-T1-E3 Datasheet SI5513DC-T1-E3 Datasheet (P4-P6)SI5513DC-T1-E3 Datasheet (P7-P8)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Tradename:: TrenchFET

Packaging:: Reel

Series:: Si5513DC

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Part # Aliases:: SI5513DC-E3

Unit Weight:: 0.002998 oz

Tags: SI5513DC-T, SI5513DC, SI5513D, SI5513, SI551, SI55, SI5

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI5513DC-T1-E3 Description

***ical: Trans MOSFET N/P-CH Si 20V 3.1A/2.1A 8-Pin Chip FET T/R

***C: Trans MOSFET N/P-CH Si 20V 3.1A/2.1A 8-Pin

***ied Electronics & Automation: MOSFET; 20V N & P CH (D-S) Complementary

***i-Key: MOSFET N/P-CH 20V 3.1A 1206-8

***ser: Dual MOSFETs 20V 4.2/2.9A

***: 20V N & P CH (D-S)

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:4.2A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:1206-8 ChipFET ;RoHS Compliant: Yes

***nell: MOSFET, DUAL, NP, 8-1206; Transistor Type:MOSFET; Transistor Polarity:NP; Voltage, Vds Typ:20V; Current, Id Cont:4.2A; Resistance, Rds On:0.075ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.5V; Case Style:1206-8 ChipFET; Termination Type:SMD

***ment14 APAC: MOSFET, DUAL, NP, 8-1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:1.1W; Transistor Case Style:1206; No. of Pins:8; Current Id Max:4.2A; Package / Case:1206-8 ChipFET; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.5V; Voltage Vgs Rds on Measurement:4.5V

Market price

Part #	Mfg.	Description	Stock	Price
SI5513DC-T1-E3 DISTI # SI5513DC-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.1A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
SI5513DC-T1-E3 DISTI # SI5513DC-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.1A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SI5513DC-T1-E3 DISTI # SI5513DC-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.1A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SI5513DC-T1-E3 DISTI # 70026247	Vishay Siliconix	MOSFET,20V N & P CH (D-S) Complementary RoHS: Compliant	0	3000:$0.5100 6000:$0.5000 15000:$0.4850 30000:$0.4640 75000:$0.4340
SI5513DC-T1-E3 DISTI # 781-SI5513DC-E3	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 RoHS: Compliant	0
SI5513DC-T1 DISTI # 781-SI5513DC	Vishay Intertechnologies	MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 RoHS: Not compliant	0
SI5513DCT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	16060
SI5513DC-T1-E3 DISTI # 1470128	Vishay Intertechnologies	MOSFET, DUAL, NP, 8-1206	0	500:£0.2270 250:£0.2520 100:£0.2760 10:£0.4140 1:£0.5590
SI5513DC-T1-E3 DISTI # 1470128	Vishay Intertechnologies	MOSFET, DUAL, NP, 8-1206 RoHS: Compliant	0	6000:$0.3150 3000:$0.3270 1000:$0.3380 500:$0.3580 250:$0.4210 100:$0.5120 10:$0.6530 1:$0.7890

Related products

Image	Part #	Description
	Mfr.#: SI5513DC-T1-GE3 OMO.#: OMO-SI5513DC-T1-GE3	MOSFET
	Mfr.#: SI5513DC-T1-E3 OMO.#: OMO-SI5513DC-T1-E3	MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
	Mfr.#: SI5513D-T1-E3 OMO.#: OMO-SI5513D-T1-E3-1190	New and Original
	Mfr.#: SI5513DC OMO.#: OMO-SI5513DC-1190	New and Original
	Mfr.#: SI5513DC-T1 OMO.#: OMO-SI5513DC-T1-1190	MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3
	Mfr.#: SI5513DC-T1 , MA22D3900L OMO.#: OMO-SI5513DC-T1-MA22D3900L-1190	New and Original
	Mfr.#: SI5513DC-T1-E3 OMO.#: OMO-SI5513DC-T1-E3-VISHAY	MOSFET N/P-CH 20V 3.1A 1206-8
	Mfr.#: SI5513DC-T1-GE3 OMO.#: OMO-SI5513DC-T1-GE3-VISHAY	MOSFET N/P-CH 20V 3.1A 1206-8
	Mfr.#: SI5513DCT1E3 OMO.#: OMO-SI5513DCT1E3-1190	Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

Availability

Stock:: Available
On Order:: 3000
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Current price of SI5513DC-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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SI5513DC-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes