 | | | |
| PartNumber | SI5504BDC-T1-GE3 | SI5504BDC-T1-E3 | SI5504DC-T1-E3 |
| Description | MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 | MOSFET RECOMMENDED ALT 78-SI5504BDC-T1-GE3 |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | ChipFET-8 | ChipFET-8 | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 4 A, 3.7 A | - | - |
| Rds On Drain Source Resistance | 65 mOhms, 140 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.12 W, 3.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | TrenchFET | TrenchFET |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.05 mm | 3.05 mm | - |
| Series | SI54 | SI54 | SI5 |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Width | 1.65 mm | 1.65 mm | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
| Forward Transconductance Min | 5 S, 3.5 S | - | - |
| Fall Time | 25 ns, 10 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 80 ns, 60 ns | - | - |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12 ns, 10 ns | - | - |
| Typical Turn On Delay Time | 15 ns, 30 ns | - | - |
| Unit Weight | 0.002998 oz | 0.002998 oz | 0.002998 oz |
| Part # Aliases | - | SI5504BDC-E3 | SI5504DC-E3 |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5515CDC-T1-E3 | MOSFET -20V Vds 8V Vgs 1206-8 ChipFET | |
| SI5504BDC-T1-GE3 | MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 | ||
| SI5513CDC-T1-GE3 | MOSFET 20V Vds 12V Vgs 1206-8 ChipFET | ||
| SI5504BDC-T1-E3 | MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 | ||
| SI5504DC-T1-GE3 | MOSFET | ||
| SI5515DC-T1-E3 | MOSFET RECOMMENDED ALT 781-SI5515CDC-T1-GE3 | ||
| SI5513DC-T1-GE3 | MOSFET | ||
| SI5513DC-T1-E3 | MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 | ||
| SI5504DC-T1-E3 | MOSFET RECOMMENDED ALT 78-SI5504BDC-T1-GE3 | ||
Vishay |
SI5509DC-T1-E3 | IGBT Transistors MOSFET N-AND P-CH 20V(D-S) | |
| SI5504BDC-T1-E3 | MOSFET N/P-CH 30V 4A 1206-8 | ||
| SI5504BDC-T1-GE3 | MOSFET N/P-CH 30V 4A 1206-8 | ||
| SI5504DC-T1-E3 | MOSFET N/P-CH 30V 2.9A 1206-8 | ||
| SI5504DC-T1-GE3 | MOSFET N/P-CH 30V 2.9A 1206-8 | ||
| SI5511DC-T1-E3 | MOSFET N/P-CH 30V 4A 1206-8 | ||
| SI5513CDC-T1-E3 | MOSFET N/P-CH 20V 4A 1206-8 | ||
| SI5513CDC-T1-GE3 | MOSFET N/P-CH 20V 4A 1206-8 | ||
| SI5513DC-T1-E3 | MOSFET N/P-CH 20V 3.1A 1206-8 | ||
| SI5513DC-T1-GE3 | MOSFET N/P-CH 20V 3.1A 1206-8 | ||
| SI5515CDC-T1-E3 | MOSFET N/P-CH 20V 4A 1206-8 | ||
| SI5515CDC-T1-GE3 | MOSFET N/P-CH 20V 4A 1206-8 | ||
| SI5509DC-T1-GE3 | MOSFET N/P-CH 20V 6.1A 1206-8 | ||
| SI5511DC-T1-GE3 | MOSFET N/P-CH 30V 4A 1206-8 | ||
| SI5504BDC-T1-E3-CUT TAPE | New and Original | ||
| SI5504BDC-T1-GE3-CUT TAPE | New and Original | ||
| SI5515CDC-T1-GE3-CUT TAPE | New and Original | ||
| SI550 | New and Original | ||
| SI5504 | New and Original | ||
| SI5504BDC | New and Original | ||
| SI5504DC | MOSFET, DUAL, NP, 8-1206 | ||
| SI5504DC-E3 | New and Original | ||
| SI5504DC-T | New and Original | ||
| SI5504DC-T1 | MOSFET RECOMMENDED ALT 78-SI5504BDC-T1-GE3 | ||
| SI5504DC-T1-E3 , MM1320K | New and Original | ||
| SI5504DC-T1/E3 | New and Original | ||
| SI550AE307M200G | New and Original | ||
| SI5513CDC | New and Original | ||
| SI5513CDC-TI | New and Original | ||
| SI5513D-T1-E3 | New and Original | ||
| SI5513DC | New and Original | ||
| SI5513DC-T1 | MOSFET RECOMMENDED ALT 781-SI5513CDC-T1-GE3 | ||
| SI5513DC-T1 , MA22D3900L | New and Original | ||
| SI5513DCT1E3 | Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| SI5515CD | New and Original | ||
| SI5515CDC | New and Original | ||
| SI5515CDC-E3 | New and Original | ||
| SI5515CDCD-T1-GE3 | New and Original | ||
| SI5515CDCT1GE3 | New and Original | ||
| SI5515DC | New and Original | ||
| SI5515DC-T1 | New and Original |