SI5515CDC-T1-E3

Mfr. #:: SI5515CDC-T1-E3
Manufacturer:: Vishay
Description:: MOSFET N/P-CH 20V 4A 1206-8
Lifecycle:: New from this manufacturer.
Datasheet:: SI5515CDC-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: SI5515CDC-T1-E3 more Information

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Tags: SI5515CDC-T, SI5515CDC, SI5515C, SI5515, SI551, SI55, SI5

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Step1:
Vacuum Packaging with PL

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Step3:
Packaging Boxes

SI5515CDC-T1-E3 Description

***ure Electronics: Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes

***ment14 APAC: DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:4A; Continuous Drain Current Id, P Channel:-3.1A; Drain Source Voltage Vds, N Channel:20V

***nell: MOSFET, NP CH, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8

SI5515CDC-T1-E3 More Information

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Part #	Mfg.	Description	Stock	Price
SI5515CDC-T1-E3 DISTI # V72:2272_09216222	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R RoHS: Compliant	2960	1000:$0.3504 500:$0.3976 250:$0.4851 100:$0.5049 25:$0.5964 10:$0.7288 1:$0.9011
SI5515CDC-T1-E3 DISTI # V36:1790_09216222	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R RoHS: Compliant	0	3000:$0.2863
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	30000:$0.2793 15000:$0.2867 6000:$0.2977 3000:$0.3197
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.3634 500:$0.4542 100:$0.5746 10:$0.7490 1:$0.8500
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 4A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.3634 500:$0.4542 100:$0.5746 10:$0.7490 1:$0.8500
SI5515CDC-T1-E3 DISTI # 32378710	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R RoHS: Compliant	2960	24:$0.9011
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5515CDC-T1-E3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R (Alt: SI5515CDC-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2599 18000:€0.2789 12000:€0.3019 6000:€0.3509 3000:€0.5149
SI5515CDC-T1-E3 DISTI # SI5515CDC-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 4A/3.1A 8-Pin Chip FET T/R (Alt: SI5515CDC-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI5515CDC-T1-E3 DISTI # 16P3787	Vishay Intertechnologies	DUAL N/P CHANNEL MOSFET, 20V, 1206,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.03ohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:800mV RoHS Compliant: Yes	0	2500:$0.3440 1000:$0.4340 500:$0.4940 250:$0.5760 100:$0.6480 50:$0.7320 25:$0.8040 1:$0.8960
SI5515CDC-T1-E3 DISTI # 781-SI5515CDC-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant	21484	1:$0.8300 10:$0.6690 100:$0.5080 500:$0.4200 1000:$0.3360 3000:$0.3040 6000:$0.2830 9000:$0.2730 24000:$0.2620
SI5515CDC-T1-E3	Vishay Intertechnologies	MOSFET -20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant	Americas -

Image	Part #	Description
	Mfr.#: SI5515CDC-T1-E3 OMO.#: OMO-SI5515CDC-T1-E3	MOSFET -20V Vds 8V Vgs 1206-8 ChipFET
	Mfr.#: SI5515CDC-T1-GE3-CUT TAPE OMO.#: OMO-SI5515CDC-T1-GE3-CUT-TAPE-1190	New and Original
	Mfr.#: SI5515CD OMO.#: OMO-SI5515CD-1190	New and Original
	Mfr.#: SI5515CDC OMO.#: OMO-SI5515CDC-1190	New and Original
	Mfr.#: SI5515CDC-E3 OMO.#: OMO-SI5515CDC-E3-1190	New and Original
	Mfr.#: SI5515CDC-T1-E3 OMO.#: OMO-SI5515CDC-T1-E3-VISHAY	MOSFET N/P-CH 20V 4A 1206-8
	Mfr.#: SI5515CDC-T1-GE3 OMO.#: OMO-SI5515CDC-T1-GE3-VISHAY	MOSFET N/P-CH 20V 4A 1206-8
	Mfr.#: SI5515CDCD-T1-GE3 OMO.#: OMO-SI5515CDCD-T1-GE3-1190	New and Original
	Mfr.#: SI5515CDCT1GE3 OMO.#: OMO-SI5515CDCT1GE3-1190	New and Original

SI5515CDC-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes