 |  | | |
| PartNumber | SI5515CDC-T1-E3 | SI5515CDC | SI5515CDC-E3 |
| Description | MOSFET -20V Vds 8V Vgs 1206-8 ChipFET | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | ChipFET-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 4 A | - | - |
| Rds On Drain Source Resistance | 36 mOhms, 100 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 11.3 nC, 11 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.1 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Series | SI54 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 22.4 S, 9.5 S | - | - |
| Fall Time | 10 ns, 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 9 ns, 32 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns, 25 ns | - | - |
| Typical Turn On Delay Time | 7 ns, 10 ns | - | - |
| Part # Aliases | SI5515CDC-E3 | - | - |
| Unit Weight | 0.002998 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5515CDC-T1-E3 | MOSFET -20V Vds 8V Vgs 1206-8 ChipFET | |
| SI5515CDC-T1-GE3-CUT TAPE | New and Original | ||
| SI5515CDC | New and Original | ||
| SI5515CDC-E3 | New and Original | ||
| SI5515CDCD-T1-GE3 | New and Original | ||
| SI5515CDCT1GE3 | New and Original | ||
Vishay |
SI5515CDC-T1-E3 | MOSFET N/P-CH 20V 4A 1206-8 | |
| SI5515CDC-T1-GE3 | MOSFET N/P-CH 20V 4A 1206-8 |