SI55

SI5517DU-T1-GE3 vs SI5517DU-T1-GE3DKR-ND vs SI551DU-T1-GE3

 
PartNumberSI5517DU-T1-GE3SI5517DU-T1-GE3DKR-NDSI551DU-T1-GE3
DescriptionMOSFET 20V Vds 8V Vgs PowerPAK ChipFET
ManufacturerVishay--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePowerPAK-ChipFET-Dual-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel, P-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current6 A--
Rds On Drain Source Resistance39 mOhms, 72 mOhms--
Vgs th Gate Source Threshold Voltage400 mV--
Vgs Gate Source Voltage8 V--
Qg Gate Charge16 nC, 14 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation8.3 W--
ConfigurationDual--
Channel ModeEnhancement--
TradenameTrenchFET--
PackagingReel--
SeriesSI54--
Transistor Type1 N-Channel, 1 P-Channel--
BrandVishay / Siliconix--
Forward Transconductance Min22 S, 9 S--
Fall Time10 ns, 55 ns--
Product TypeMOSFET--
Rise Time65 ns, 35 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time40 ns, 40 ns--
Typical Turn On Delay Time20 ns, 8 ns--
Part # AliasesSI5517DU-GE3--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
SI5517DU-T1-GE3 MOSFET 20V Vds 8V Vgs PowerPAK ChipFET
SI5580 Motors & Drives Motor Drives PKG 5.5A 80VDC IND
SI5517DU-T1-GE3DKR-ND New and Original
SI551DU-T1-GE3 New and Original
SI552 New and Original
SI5524 New and Original
SI553 New and Original
SI5530-BC New and Original
SI5534C-A00435-GMR New and Original
SI5543DC-T1 New and Original
SI555 New and Original
SI5551DL-TI-E3 New and Original
Vishay
Vishay
SI5515DC-T1-E3 MOSFET N/P-CH 20V 4.4A 1206-8
SI5515DC-T1-GE3 MOSFET N/P-CH 20V 4.4A 1206-8
SI5517DU-T1-E3 MOSFET N/P-CH 20V 6A CHIPFET
SI5517DU-T1-GE3 MOSFET N/P-CH 20V 6A CHIPFET
SI5519DU-T1-GE3 MOSFET N/P-CH 20V 6A CHIPFETs
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