MT16JTF25664AY-1G4D1

PDF: 09005aef82b22503/Source: 09005aef82b224f4 Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF16C_256_512x64AY.fm - Rev. A 7/07 EN
10 ©2007 Micron Technology, Inc. All rights reserved.
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
Serial Presence-Detect
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal ERASE/PROGRAM cycle. During the WRITE
cycle, the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resis-
tance, and the EEPROM does not respond to its slave address.
Table 12: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 3.0 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
V
OL –0.4V
Input leakage current: V
IN = GND to VDD
ILI 0.10 3 µA
Output leakage current: V
OUT = GND to VDD
ILO 0.05 3 µA
Standby current
I
SB 1.6 4 µA
Power supply current, READ: SCL clock frequency = 100 kHz
I
CC
R
0.4 1 mA
Power supply current, WRITE: SCL clock frequency = 100 kHz
I
CC
W
23mA
Table 13: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F 300 ns 2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R–0.3µs2
SCL clock frequency
f
SCL 400 kHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
PDF: 09005aef82b22503/Source: 09005aef82b224f4 Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF16C_256_512x64AY.fm - Rev. A 7/07 EN
11 ©2007 Micron Technology, Inc. All rights reserved.
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
Serial Presence-Detect
Table 14: Serial Presence-Detect Matrix
Byte Description Entry (Version) 2GB 4GB
0
CRC coverage
EEPROM device size
Number of SPD bytes written
Bytes 0–116
256 bytes
176 bytes
92 92
1
SPD revision
Rev 1.0 10 10
2
DRAM device type (technology)
DDR3 SDRAM 0B 0B
3
Module type (form factor)
UDIMM 02 02
4
SDRAM device density and internal banks
1Gb/8 banks
2Gb/8 banks
02
03
5
SDRAM device addressing (row and column counts)
(14,10)
(15,10)
11
19
6
Reserved
00000
7
Module organization (module ranks, SDRAM device
width)
2 ranks, x 8 I/O 09 09
8
Module memory bus width
No ECC, 64-bit 03 03
9
Fine time base (FTB) dividend/divisor
5/2 52 52
10
Medium time base (MTB) dividend
10101
11
Medium time base (MTB) divisor
80808
12
SDRAM devise minimum cycle time (
t
CK [MIN])
-1G4/-1G3/-1G1/-1G0
-80C/-80B
0F
14
–/–/0F/0F
14
13
Reserved
00000
14
CAS latencies supported, low byte
-1G4
-1G3
-1G1
-1G0
-80C
-80B
34
54
1C
14
06
04
1C
14
06
04
15
CAS latencies supported, high byte
00000
16
MIN CAS latency time (
t
AA [MIN])
-1G4
-1G3
-1G1
-1G0
-80C
-80B
6C
78
69
78
64
78
69
78
64
78
17
MIN write recovery time (
t
WR [MIN])
78 78
18
MIN RAS# to CAS# delay time (
t
RCD [MIN])
-1G4
-1G3
-1G1
-1G0
-80C
-80B
6C
78
69
78
64
78
69
78
64
78
19
MIN row active-to-row active delay time (
t
RRD [MIN])
-1G4/-1G3/-1G1/-1G0
-80C/-80B
30
50
–/–/30/30
50
20
MIN row precharge delay time (
t
RP [MIN])
-1G4
-1G3
-1G1
-1G0
-80C
-80B
6C
78
69
78
64
78
69
78
64
78
21
Upper nibble for
t
RAS and
t
RC
11 11
22
MIN active-to-precharge delay time (
t
RAS [MIN]), LSB
-1G4/-1G3
-1G1/-1G0/-80C/-80B
20
2C
2C
PDF: 09005aef82b22503/Source: 09005aef82b224f4 Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF16C_256_512x64AY.fm - Rev. A 7/07 EN
12 ©2007 Micron Technology, Inc. All rights reserved.
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
Serial Presence-Detect
23
MIN active-to-active/refresh (
t
RC [MIN]), LSB
-1G4
-1G3
-1G1
-1G0
-80C
-80B
8C
98
95
A4
90
A4
95
A4
90
A4
24
MIN refresh recovery delay time (
t
RFC [MIN]), LSB
1Gb
2Gb
70
00
25
MIN refresh recovery delay time (
t
RFC [MIN]), MSB
1Gb
2Gb
03
05
26
MIN internal WRITE-to-READ command delay time
(
t
WTR [MIN])
3C 3C
27
MIN internal READ-to-PRECHARGE command delay
time (
t
RTP [MIN])
3C 3C
28
MIN four active window delay time (
t
FAW [MIN]) upper
nibble
-1G4/-1G3
-1G1/-1G0/-80C/-80B
00
01
01
29
MIN four activate window delay time (
t
FAW [MIN]), LSB
-1G4/-1G3
-1G1/-1G0
-80C/-80B
F0
2C
40
2C
40
30
SDRAM device output drivers supported
82 82
31
SDRAM device thermal refresh options
05 05
32–59
Reserved, general section
00 00
60
Module NOM height
30mm 0F 0F
61
Module MAX thickness
Dual rank, 4.0mm 11 11
62
Reference raw card used
UDIMM R/C B 01 01
63
Address mapping from edge connector to DRAM
devices
Mirrored 01 01
64–116
Reserved
00000
117
Module manufacturer ID (continuation code)
80 80
118
Module manufacturer ID (manufacturer’s ID code)
2C 2C
119
Module manufacturing location
1–12 01-0C 01-0C
120–121
Module manufacturing date
Variable data Variable data
122–125
Module serial number
Variable data Variable data
126, 127
CRC (cyclic redundancy check)
-1G4
-1G3
-1G1
-1G0
-80C
-80B
9E23
7D3C
4408
27FD
D3AD
DC51
DBDE
B82B
4C76
4387
128–145
Module part number (ASCII)
Variable data Variable data
146
Module revision code, SDRAM device die revision
Variable data Variable data
147
Module revision code, PCB revision
Variable data Variable data
148
DRAM device manufacturer ID (continuation code)
80 80
149
DRAM device manufacturer ID (manufacturer’s ID code)
2C 2C
150–175
Reserved for manufacturer-specific data
00 00
176–255
Reserved for customer-specific data
FF FF
Table 14: Serial Presence-Detect Matrix (continued)
Byte Description Entry (Version) 2GB 4GB

MT16JTF25664AY-1G4D1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 2GB 240UDIMM
Lifecycle:
New from this manufacturer.
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