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MT16JTF25664AY-1G4D1

P1-P3P4-P6P7-P9P10-P12P13-P13
PDF: 09005aef82b22503/Source: 09005aef82b224f4 Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF16C_256_512x64AY.fm - Rev. A 7/07 EN
7 ©2007 Micron Technology, Inc. All rights reserved.
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
Electrical Specifications
Electrical Specifications
Stresses greater than those listed in Table 7, may cause permanent damage to the
module. This is a stress rating only, and functional operation of the module at these or
any other conditions outside those indicated in the device data sheet is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Notes: 1. VREF must not be greater than 0.6 x VDD. When VDD is less than 500mV, VREF may be equal to
or less than 300mV.
Notes: 1. V
TT termination voltage in excess of stated limit will adversely affect the command and
address signals' voltage margin and will reduce timing margins.
2. T
A
and T
C
are simultaneous requirements.
3. Refresh rate is required to double when 85°C < T
C
≤ 95°C.
4. For further information, refer to technical note TN-00-08: Thermal Applications, available
on Micron’s Web site.
Input Capacitance
Micron encourages designers to simulate the performance of the module to achieve
optimum values. Simulations are significantly more accurate and realistic than a gross
estimation of module capacitance when inductance and delay parameters associated
with trace lengths are used in simulations.
Component AC Timing and Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s Web site. Module speed grades
correlate with component speed grades, as shown in Table 9.
Table 7: Absolute Maximum Ratings
Symbol Parameter Min Max Units
V
DD
1
VDD supply voltage relative to VSS
–0.4 +1.975 V
V
IN, VOUT
Voltage on any pin relative to VSS
–0.4 +1.975 V
I
I
Input leakage current; Any input 0V ≤ VIN ≤ VDD;
V
REF input 0V ≤ VIN ≤ 0.95V (All other pins not under
test = 0V)
Address inputs
RAS#, CAS#, WE#,
S#, CKE, ODT, BA
–16 +16 µA
CK, CK#
–8 +8
DM
–2 +2
IOZ
Output leakage current; 0V ≤ VOUT ≤ VDDQ; DQs and
ODT are disabled
DQ, DQS, DQS#
–2 +2 µA
I
VREF
VREF leakage current; VREF = valid VREF level
–32 +32 µA
Table 8: Operating Conditions
Symbol Parameter Min Max Units
I
VTT
Termination reference current from VTT
–600 +600 mA
V
TT
1
Termination reference voltage – command address bus
–0.483 x VDD +0.517 x VDD V
T
A
2,4
Module ambient operating temperature Commercial
0+70°C
Industrial
–40 +85 °C
T
C
2,4
DDR3 SDRAM component case operating
temperature
3
Commercial
0+85°C
Industrial
–40 +95 °C
PDF: 09005aef82b22503/Source: 09005aef82b224f4 Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF16C_256_512x64AY.fm - Rev. A 7/07 EN
8 ©2007 Micron Technology, Inc. All rights reserved.
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
Electrical Specifications
Table 9: Module and Component Speed Grades
DDR3 components must be able to meet or exceed the listed speed grade.
Module Speed Grade Component Speed Grade
-1G4 -15E
-1G3 -15
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
PDF: 09005aef82b22503/Source: 09005aef82b224f4 Micron Technology, Inc., reserves the right to change products or specifications without notice.
JTF16C_256_512x64AY.fm - Rev. A 7/07 EN
9 ©2007 Micron Technology, Inc. All rights reserved.
2GB, 4GB (x64, DR) 240-Pin DDR3 SDRAM UDIMM
Electrical Specifications
IDD Specifications
Table 10: DDR3 IDD Specifications and Conditions – 2GB
Values shown for each data rate are for the MT41J128M8 DDR3 SDRAM only and are computed from values
specified in the 1Gb (128 Meg x 8) component data sheet
Parameter Symbol 1333 1067 800 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE
I
DD0 1,080 1,000 840 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
I
DD1 1,280 1,120 960 mA
Precharge power down current: Slow exit
I
DD2P 400 400 400 mA
Precharge power down current: Fast exit
I
DD2P 160 160 160 mA
Precharge quiet standby current
I
DD2Q 1,120 960 800 mA
Precharge standby current
I
DD2N 1,200 1,040 880 mA
Active power-down current
I
DD3P 880 720 640 mA
Active standby current
I
DD3N 1,440 1,200 960 mA
Burst read operating current
I
DD4R 2,080 1,840 1,600 mA
Burst write operating current
I
DD4W 2,280 2,000 1,720 mA
Refresh current
I
DD5B 4,640 4,080 3,440 mA
Self-refresh temperature current: MAX T
C
= 85°C
IDD6969696mA
Self-refresh temperature current (SRT-enabled): MAX T
C
= 95°C
IDD6ET 144 144 144 mA
All bank interleaved read current
I
DD7 4,400 3,840 3,600 mA
Table 11: DDR3 IDD Specifications and Conditions – 4GB
Values shown for each data rate are for the MT41J256M8 DDR3 SDRAM only and are computed from values
specified in the 2Gb (256 Meg x 8) component data sheet
Parameter Symbol 1333 1067 800 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE
I
DD0 1,020 1,040 880 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE
I
DD1 1,320 1,060 1,000 mA
Precharge power down current: Slow exit
I
DD2P 400 400 400 mA
Precharge power down current: Fast exit
I
DD2P 160 160 160 mA
Precharge quiet standby current
I
DD2Q 1,120 960 800 mA
Precharge standby current
I
DD2N 1,120 960 800 mA
Active power-down current
I
DD3P 960 800 720 mA
Active standby current
I
DD3N 1,520 1,280 1,040 mA
Burst read operating current
I
DD4R 1,880 1,880 1,640 mA
Burst write operating current
I
DD4W 2,480 2,200 1,920 mA
Refresh current
I
DD5B 5,120 4,560 3,920 mA
Self-refresh temperature current: MAX T
C
= 85°C
I
DD6 128 128 128 mA
Self-refresh temperature current (SRT-enabled): MAX T
C
= 95°C
I
DD6ET 192 192 192 mA
All bank interleaved read current
I
DD7 3,760 3,520 3,280 mA
P1-P3P4-P6P7-P9P10-P12P13-P13

MT16JTF25664AY-1G4D1

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Buy MT16JTF25664AY-1G4D1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 2GB 240UDIMM
Lifecycle:
New from this manufacturer.
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