VS-30CTH02SHM3
www.vishay.com
Vishay Semiconductors
Revision: 13-Mar-18
1
Document Number: 96522
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 30 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• AEC-Q101 qualified, class 1 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
Vishay Semiconductors 200 V series are the state of the art
hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop and
hyperfast recovery time.
The planar structure and the platinum doped life
time control, guarantee the best overall
performance, ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
Package D
2
PAK (TO-263AB)
I
F(AV)
2 x 15 A
V
R
200 V
V
F
at I
F
0.78 V
t
rr
typ. 30 ns
T
J
max. 175 °C
Circuit configuration Common cathode
Anode
1
3
2
Base
Common
Cathode
2
Common
Cathode
Anode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage V
RRM
200 V
Average rectified forward current
per diode
I
F(AV)
T
C
= 159 °C 15
Aper device 30
Non-repetitive peak surge current I
FSM
T
C
= 25 °C 200
Operating junction and storage temperatures T
J
, T
Stg
-55 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
, V
R
I
R
= 100 μA 200 - - V
Forward voltage V
F
I
F
= 15 A - 0.92 1.05
V
I
F
= 15 A, T
J
= 125 °C - 0.78 0.85
Reverse leakage current I
R
V
R
= V
R
rated - - 10
μA
T
J
= 125 °C, V
R
= V
R
rated - 5 300
Junction capacitance C
T
V
R
= 200 V - 57 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8 - nH
