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VS-30CTH02SHM3

P1-P3P4-P6P7-P8
VS-30CTH02SHM3
www.vishay.com
Vishay Semiconductors
Revision: 13-Mar-18
4
Document Number: 96522
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
DC
05 25201510
180
170
150
140
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
160
See note (1)
Square wave (D = 0.50)
Rated V
R
applied
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
0 5 10 15 20 25
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0
5
10
15
20
25
RMS limit
DC
10
100 1000
t
rr
(ns)
dI
F
/dt (A/µs)
100
I
F
= 15 A
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
1000
10
100 1000
Q
rr
(nC)
dI
F
/dt (A/µs)
100
I
F
= 15 A
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
VS-30CTH02SHM3
www.vishay.com
Vishay Semiconductors
Revision: 13-Mar-18
5
Document Number: 96522
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Q
rr
0.5 I
RRM
di
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
di
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) di
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) di
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
2
- Current rating (30 A)
3
- C = common cathode
4 - T = TO-220, D
2
PAK
5
- H = hyperfast rectifier
6
- Voltage rating (02 = 200 V)
- H = AEC-Q101 qualified
7
-
S = D
2
PAK
8
-
None = tube (50 pieces)
TRL = tape and reel (left oriented, for D
2
PAK package)
TRR = tape and reel (right oriented, for D
2
PAK package)
9
- M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
10
Device code
51 32 4 6 7 8 9 10
VS- 30 C T H 02 S TRL H M3
1 - Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95046
Part marking information www.vishay.com/doc?95444
Packaging information www.vishay.com/doc?95032
Outline Dimensions
www.vishay.com
Vishay Semiconductors
Revision: 08-Jul-15
1
Document Number: 95046
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
D
2
PAK
DIMENSIONS in millimeters and inches
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
(7)
Outline conforms to JEDEC
®
outline TO-263AB
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base
Metal
Plating
Conforms to JE DEC
®
outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
M
M
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
P1-P3P4-P6P7-P8

VS-30CTH02SHM3

Mfr. #:
Buy VS-30CTH02SHM3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2x15A If; 200V Vr TO-263AB (D2PAK)
Lifecycle:
New from this manufacturer.
Delivery:
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