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BUK7608-40B,118

P1-P3P4-P6P7-P9P10-P12P13-P13
BUK7608-40B_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 24 September 2008 3 of 12
NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
I
D
=75A; V
sup
≤ 40 V; R
GS
=50Ω; V
GS
=10V;
T
j(init)
= 25 °C; unclamped
-241mJ
Table 4. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of solder point temperature
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
T
mb
(°C)
0 20015050 100
003aac081
40
80
120
I
D
(A)
0
(1)
T
mb
(°C)
0 20015050 100
003aac070
40
80
120
P
der
(%)
0
003aac079
V
DS
(V)
10
−1
10
2
101
10
2
10
10
3
I
D
(A)
1
(1)
Limit R
DSon
= V
DS
/ I
D
t
p
= 10 μs
1 ms
100 μs
10 ms
100 ms
DC
BUK7608-40B_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 24 September 2008 4 of 12
NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
mounted on a printed-circuit board;
minimum footprint
-50-K/W
R
th(j-mb)
thermal resistance from
junction to mounting
base
see Figure 4 - - 0.95 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
003aac080
10
−6
10
−1
110
−2
10
−3
10
−5
10
−4
10
−1
10
−2
1
10
−3
t
p
(s)
Z
th(j − mb)
(K/W)
t
p
t
p
T
P
t
T
δ =
single pulse
0.2
0.1
0.05
0.02
δ = 0.5
BUK7608-40B_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 24 September 2008 5 of 12
NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=0.25mA; V
GS
=0V; T
j
=25°C 40 - - V
I
D
=0.25mA; V
GS
=0V; T
j
=-55°C 36 - - V
V
GS(th)
gate-source threshold
voltage
I
D
=1mA; V
DS
= V
GS
; T
j
=25°C; see
Figure 9; see Figure 10
234V
I
D
=1mA; V
DS
= V
GS
; T
j
=-55°C; see
Figure 9
; see Figure 10
--4.4V
I
D
=1mA; V
DS
= V
GS
; T
j
= 175 °C; see
Figure 9
; see Figure 10
1- - V
I
DSS
drain leakage current V
DS
=40V; V
GS
=0V; T
j
= 25 °C - 0.02 1 µA
V
DS
=40V; V
GS
=0V; T
j
= 175 °C - - 500 µA
I
GSS
gate leakage current V
DS
=0V; V
GS
=20V; T
j
= 25 °C - 2 100 nA
V
DS
=0V; V
GS
=-20V; T
j
= 25 °C - 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=25A; T
j
= 175 °C; see
Figure 11; see Figure 12
--15.2mΩ
V
GS
=10V; I
D
=25A; T
j
=25°C; see
Figure 12
; see Figure 11
-6.68mΩ
Dynamic characteristics
Q
G(tot)
total gate charge I
D
=25A; V
DS
=32V; V
GS
=10V;
T
j
=25°C; see Figure 14
-36-nC
Q
GS
gate-source charge - 9 - nC
Q
GD
gate-drain charge - 12 - nC
C
iss
input capacitance V
GS
=0V; V
DS
=25V; f=1MHz;
T
j
=25°C; see Figure 15
- 2017 2689 pF
C
oss
output capacitance - 486 583 pF
C
rss
reverse transfer
capacitance
- 213 291 pF
t
d(on)
turn-on delay time V
DS
=30V; R
L
=1.2Ω; V
GS
=10V;
R
G(ext)
=10Ω; T
j
=25°C
-20-ns
t
r
rise time - 51 - ns
t
d(off)
turn-off delay time - 20 - ns
t
f
fall time - 33 - ns
L
D
internal drain
inductance
from drain lead 6 mm from package to
center of die; T
j
=25°C
-4.5-nH
from upper edge of drain mounting base to
centre of die; T
j
=25°C
-2.5-nH
L
S
internal source
inductance
from source lead 6 mm from package to
source bond pad; T
j
=25°C
-7.5-nH
Source-drain diode
V
SD
source-drain voltage I
S
=25A; V
GS
=0V; T
j
= 25 °C; see
Figure 13
- 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A; dI
S
/dt = -100 A/µs; V
GS
=-10V;
V
DS
=20V; T
j
=25°C
-53-ns
Q
r
recovered charge - 44 - nC
P1-P3P4-P6P7-P9P10-P12P13-P13

BUK7608-40B,118

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Manufacturer:
Nexperia
Description:
MOSFET HIGH PERF TRENCHMOS
Lifecycle:
New from this manufacturer.
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