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BUK7608-40B,118

P1-P3P4-P6P7-P9P10-P12P13-P13
BUK7608-40B_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 24 September 2008 6 of 12
NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Forward transconductance as a function of
drain current; typical values
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
V
DS
(V)
0108462
003aac076
100
200
300
I
D
(A)
0
20
14
12
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
V
GS
(V) = 10
I
D
(A)
0604020
003aac073
20
40
60
g
fs
(S)
0
I
D
(A)
0 300200100
003aac077
8
12
16
R
DSon
(mΩ)
4
6.0 6.5 7.0 8.0
20
V
GS
(V) = 10
V
GS
(V)
08624
003aac074
50
25
75
100
I
D
(A)
0
T
j
= 175 °C 25 °C
BUK7608-40B_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 24 September 2008 7 of 12
NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
Fig 9. Gate-source threshold voltage as a function of
junction temperature
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
T
j
(°C)
−60 160120060
003aab852
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
003aab853
V
GS
(V)
0642
10
−4
10
−5
10
−2
10
−3
10
−1
I
D
(A)
10
−6
min typ max
003aac075
V
GS
(V)
5201510
8
10
6
12
14
R
DSon
(mΩ)
4
T
j
(°C)
−60 180120060
003aab851
1
0.5
1.5
2
a
0
BUK7608-40B_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 24 September 2008 8 of 12
NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
Fig 13. Reverse diode current as a function of reverse
diode voltage; typical values
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values
V
SD
(V)
0.0 1.20.90.3 0.6
003aac071
50
25
75
100
I
S
(A)
0
T
j
= 175 °C 25 °C
Q
G
(nC)
0403010 20
003aac072
4
6
2
8
10
V
GS
(V)
0
V
DD
= 14 V
V
DD
= 32 V
003aac078
1000
2000
3000
C
(pF)
0
V
DS
(V)
10
−2
10
2
1010
−1
1
C
iss
C
oss
C
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BUK7608-40B,118

Mfr. #:
Buy BUK7608-40B,118
Manufacturer:
Nexperia
Description:
MOSFET HIGH PERF TRENCHMOS
Lifecycle:
New from this manufacturer.
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