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PBSS303ND,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 9 of 16
NXP Semiconductors
PBSS303ND
60 V, 3 A NPN low V
CEsat
(BISS) transistor
V
CE
=2V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
Fig 6. DC current gain as a function of collector
current; typical values
Fig 7. Collector current as a function of
collector-emitter voltage; typical values
V
CE
=2V
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
I
C
/I
B
=20
(1) T
amb
= −55 °C
(2) T
amb
=25°C
(3) T
amb
= 100 °C
Fig 8. Base-emitter voltage as a function of collector
current; typical values
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
006aaa703
400
800
1200
h
FE
0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
V
CE
(V)
0 2.01.60.8 1.20.4
006aaa704
2
4
6
I
C
(A)
0
144
128
112
96
80
I
B
= 160 mA
16
32
48
64
006aaa705
0.4
0.8
1.2
V
BE
(V)
0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
006aaa706
0.4
0.8
1.2
V
BEsat
(V)
0
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 10 of 16
NXP Semiconductors
PBSS303ND
60 V, 3 A NPN low V
CEsat
(BISS) transistor
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −55 °C
T
amb
=25°C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
=50
(3) I
C
/I
B
=10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 13. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa707
10
−1
10
−2
1
V
CEsat
(V)
10
−3
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
006aaa708
10
−1
10
−2
1
V
CEsat
(V)
10
−3
I
C
(mA)
10
−1
10
4
10
3
110
2
10
(1)
(2)
(3)
006aaa709
I
C
(mA)
10
−1
10
4
10
3
110
2
10
10
−1
1
10
10
2
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
I
C
(mA)
10
−1
10
4
10
3
110
2
10
006aaa710
1
10
−1
10
2
10
10
3
R
CEsat
(Ω)
10
−2
(1)
(2)
(3)
PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 11 of 16
NXP Semiconductors
PBSS303ND
60 V, 3 A NPN low V
CEsat
(BISS) transistor
8. Test information
Fig 14. BISS transistor switching time definition
V
CC
= 9.2 V; I
C
= 2 A; I
Bon
= 0.1 A; I
Boff
= −0.1 A
Fig 15. Test circuit for switching times
006aaa003
I
Bon
(100 %)
I
B
input pulse
(idealized waveform)
I
Boff
90 %
10 %
I
C
(100 %)
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
R
C
R2
R1
DUT
mlb826
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
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PBSS303ND,115

Mfr. #:
Buy PBSS303ND,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS BISS TAPE-7
Lifecycle:
New from this manufacturer.
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