PBSS303ND_2 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 02 — 14 December 2007 3 of 16
NXP Semiconductors
PBSS303ND
60 V, 3 A NPN low V
CEsat
(BISS) transistor
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
[5] Pulse test: t
p
≤ 10 ms; δ≤10 %.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 60 V
V
EBO
emitter-base voltage open collector - 5 V
I
C
collector current
[1]
-1A
[2]
-3A
I
CM
peak collector current single pulse;
t
p
≤ 1ms
-6A
I
B
base current - 0.8 A
I
BM
peak base current single pulse;
t
p
≤ 1ms
-2A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 360 mW
[3]
- 600 mW
[4]
- 750 mW
[2]
- 1.1 W
[1][5]
- 2.5 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
