MCT5201SM Datasheet MCT5201M, MCT5201SR2M, MCT5201SM | P1-P3

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3

September 2009

MCT5201M, MCT5210M, MCT5211M

Low Input Current Phototransistor Optocouplers

Features

■

High CTR

CE(SAT)

comparable to Darlingtons

■

CTR guaranteed 0°C to 70°C

■

High common mode transient rejection 5kV/µs

■

Data rates up to 150kbits/s (NRZ)

■

Underwriters Laboratory (UL) recognized,

file #E90700, volume 2

■

IEC60747-5-2 approved (ordering option V)

Applications

■

CMOS to CMOS/LSTTL logic isolation

■

LSTTL to CMOS/LSTTL logic isolation

■

RS-232 line receiver

■

Telephone ring detector

■

AC line voltage sensing

■

Switching power supply

Description

The MCT52XXM series consists of a high-efficiency

AlGaAs, infrared emitting diode, coupled with an NPN

phototransistor in a six pin dual-in-line package.

The MCT52XXM is well suited for CMOS to LSTT/TTL

interfaces, offering 250% CTR

CE(SAT)

with 1mA of LED

input current. When an LED input current of 1.6mA is

supplied data rates to 20K bits/s are possible.

The MCT52XXM can easily interface LSTTL to LSTTL/

TTL, and with use of an external base to emitter resistor

data rates of 100K bits/s can be achieved.

Schematic Package Outlines

1

2

6

5 COL

4 EMITTER

BASE

ANODE

CATHODE

3

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 2

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Symbol Parameters Value Units

TOTAL DEVICE

T

STG

Storage Temperature -55 to +150 °C

T

OPR

Operating Temperature -40 to +100 °C

T

SOL

Lead Solder Temperature 260 for 10 sec °C

P

D

Total Device Power Dissipation @ 25°C (LED plus detector) 260 mW

Derate Linearly From 25°C 3.5 mW/°C

EMITTER

I

F

Continuous Forward Current 50 mA

V

R

Reverse Input Voltage 6 V

I

F

(pk) Forward Current - Peak (1 µs pulse, 300 pps) 3.0 A

P

D

LED Power Dissipation 75 mW

Derate Linearly From 25°C 1.0 mW/°C

DETECTOR

I

C

Continuous Collector Current 150 mA

P

D

Detector Power Dissipation 150 mW

Derate Linearly from 25°C 2.0 mW/°C

MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 3

MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers

Electrical Characteristics

(T

A

= 25°C unless otherwise speciﬁed)

Individual Component Characteristics

Isolation Characteristics

*All typical T

A

= 25°C

Symbol Parameters Test Conditions Device Min. Typ.* Max. Units

EMITTER

V

F

Input Forward Voltage I

F

= 5mA All 1.25 1.5 V

∆

V

F

∆

T

A

Forward Voltage Temp. Coefﬁcient I

F

= 2mA All -1.75 mV/°C

V

R

Reverse Voltage I

R

= 10µA All 6 V

C

J

Junction Capacitance V

F

= 0V, f = 1.0MHz All 18 pF

DETECTOR

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 1.0mA, I

F

= 0 All 30 100 V

BV

CBO

Collector-Base Breakdown Voltage I

C

= 10µA, I

F

= 0 All 30 120 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 10µA, I

F

= 0 All 5 10 V

I

CER

Collector-Emitter Dark Current V

CE

= 10V, I

F

= 0,

R

BE

= 1M

Ω

All 1 100 nA

C

CE

Capacitance, Collector to Emitter V

CE

= 0, f = 1MHz All 10 pF

C

CB

Capacitance, Collector to Base V

CB

= 0, f = 1MHz All 80 pF

C

EB

Capacitance, Emitter to Base V

EB

= 0, f = 1MHz All 15 pF

Symbol Characteristic Test Conditions Device Min. Typ.* Max. Units

V

ISO

Input-Output Isolation

Voltage

(10)

f = 60Hz, t = 1 sec. All 7500 Vac(peak)

R

ISO

Isolation Resistance

(10)

V

I-O

= 500 VDC, T

A

= 25°C All 10

11

Ω

C

ISO

Isolation Capacitance

(9)

V

I-O

= 0, f = 1 MHz All 0.4 0.6 pF

CM

H

Common Mode Transient V

CM

= 50 V

P-P1

, R

L

= 750

Ω

,

I

F

= 0

MCT5210M/11M 5000 V/µs

Rejection – Output HIGH V

CM

= 50 V

P-P

, R

L

= 1K

Ω

,

I

F

= 0

MCT5201M

CM

L

Common Mode Transient V

CM

= 50 V

P-P1

, R

L

= 750

Ω

,

I

F

=1.6mA

MCT5210M/11M 5000 V/µs

Rejection – Output LOW V

CM

= 50 V

P-P1

, R

L

= 1K

Ω

,

I

F

= 5mA

MCT5201M

MCT5201SM

MCT5201SM

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