©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 4
MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers
Electrical Characteristics
(Continued)
(T
A
= 25°C unless otherwise specified)
Transfer Characteristics
*All typicals at T
A
= 25°C
Symbol Characteristics Test Conditions Device Min. Typ.* Max. Units
DC CHARACTERISTICS
CTR
CE(SAT)
Saturated Current
Transfer Ratio
(1)
(Collector to Emitter)
I
F
= 5mA, V
CE
= 0.4V MCT5201M 120 %
I
F
= 3.0mA, V
CE
= 0.4V MCT5210M 60
I
F
= 1.6mA, V
CE
= 0.4V MCT5211M 100
I
F
= 1.0mA, V
CE
= 0.4V 75
CTR
(CE)
Current Transfer Ratio
(Collector to Emitter)
(1)
I
F
= 3.0mA, V
CE
= 5.0V MCT5210M 70 %
I
F
= 1.6mA, V
CE
= 5.0V MCT5211M 150
I
F
= 1.0mA, V
CE
= 5.0V 110
CTR
(CB)
Current Transfer Ratio
Collector to Base
(2)
I
F
= 5mA, V
CB
= 4.3V MCT5201M 0.28 %
I
F
= 3.0mA, V
CE
= 4.3V MCT5210M 0.2
I
F
= 1.6mA, V
CE
= 4.3V MCT5211M 0.3
I
F
= 1.0mA, V
CE
= 4.3V 0.25
V
CE(SAT)
Saturation Voltage I
F
= 5mA, I
CE
= 6mA MCT5201M 0.4 V
I
F
= 3.0mA, I
CE
= 1.8mA MCT5210M 0.4
I
F
= 1.6mA, I
CE
= 1.6mA MCT5211M 0.4
AC CHARACTERISTICS
T
PHL
Propagation Delay
HIGH-to-LOW
(3)
R
L
= 330 , R
BE
= I
F
= 3.0mA,
V
CC
= 5.0V
MCT5210M 10 µs
R
L
= 3.3 k, R
BE
= 39k 7
R
L
= 750 , R
BE
= I
F
= 1.6mA,
V
CC
= 5.0V
MCT5211M 14
R
L
= 4.7 k, R
BE
= 91k 15
R
L
= 1.5 k, R
BE
= I
F
= 1.0mA,
V
CC
= 5.0V
17
R
L
= 10 k, R
BE
= 160k 24
V
CE
= 0.4V, V
CC
= 5V,
R
L
= fig. 13, R
BE
= 330k
I
F
= 5mA MCT5201M 3 30
T
PLH
Propagation Delay
LOW-to-HIGH
(4)
R
L
= 330 , R
BE
= I
F
= 3.0mA,
V
CC
= 5.0V
MCT5210M 0.4 µs
R
L
= 3.3 k, R
BE
= 39k 8
R
L
= 750 , R
BE
= I
F
= 1.6mA,
V
CC
= 5.0V
MCT5211M 2.5
R
L
= 4.7 k, R
BE
= 91k 11
R
L
= 1.5 k, R
BE
= I
F
= 1.0mA,
V
CC
= 5.0V
7
R
L
= 10 k, R
BE
= 160k 16
V
CE
= 0.4V, V
CC
= 5V,
R
L
= fig. 13, R
BE
= 330k
I
F
= 5mA MCT5201M 12 13
t
d
Delay Time
(5)
V
CE
= 0.4V, R
BE
= 330k,
R
L
= 1 k, V
CC
= 5V
I
F
= 5mA MCT5201M 1.1 15 µs
t
r
Rise Time
(6)
V
CE
= 0.4V, R
BE
= 330k,
R
L
= 1 k, V
CC
= 5V
I
F
= 5mA MCT5201M 2.5 20 µs
t
s
Storage Time
(7)
V
CE
= 0.4V, R
BE
= 330 k,
R
L
= 1 k, V
CC
= 5V
I
F
= 5mA MCT5201M 10 13 µs
t
f
Fall Time
(8)
V
CE
= 0.4V, R
BE
= 330 k,
R
L
= 1 k, V
CC
= 5V
I
F
= 5mA MCT5201M 16 30 µs
©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 5
MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers
Notes:
1. DC Current Transfer Ratio (CTR
CE
) is defined as the transistor collector current (I
CE
) divided by the input LED
current (I
F
) x 100%, at a specified voltage between the collector and emitter (V
CE
).
2. The collector base Current Transfer Ratio (CTR
CB
) is defined as the transistor collector base photocurrent(I
CB
)
divided by the input LED current (I
F
) time 100%.
3. Referring to Figure 14 the T
PHL
propagation delay is measured from the 50% point of the rising edge of the data
input pulse to the 1.3V point on the falling edge of the output pulse.
4. Referring to Figure 14 the T
PLH
propagation delay is measured from the 50% point of the falling edge of data input
pulse to the 1.3V point on the rising edge of the output pulse.
5. Delay time (t
d
) is measured from 50% of rising edge of LED current to 90% of Vo falling edge.
6. Rise time (t
r
) is measured from 90% to 10% of Vo falling edge.
7. Storage time (t
s
) is measured from 50% of falling edge of LED current to 10% of Vo rising edge.
8. Fall time (t
f
) is measured from 10% to 90% of Vo rising edge.
9. C
ISO
is the capacitance between the input (pins 1, 2, 3 connected) and the output, (pin 4, 5, 6 connected).
10. Device considered a two terminal device: Pins 1, 2, and 3 shorted together, and pins 5, 6 and 7 are shorted
together.
©1983 Fairchild Semiconductor Corporation www.fairchildsemi.com
MCT5201M, MCT5210M, MCT5211M Rev. 1.1.3 6
MCT5201M, MCT5210M, MCT5211M — Low Input Current Phototransistor Optocouplers
Safety and Insulation Ratings
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol Parameter Min. Typ. Max. Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms I-IV
For Rated Main voltage < 300Vrms I-IV
Climatic Classification 55/100/21
Pollution Degree (DIN VDE 0110/1.89) 2
CTI Comparative Tracking Index 175
V
PR
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594 V
peak
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275 V
peak
V
IORM
Max. Working Insulation Voltage 850 V
peak
V
IOTM
Highest Allowable Over Voltage 6000 V
peak
External Creepage 7 mm
External Clearance 7 mm
Insulation Thickness 0.5 mm
RIO Insulation Resistance at Ts, V
IO
= 500V 10
9

MCT5201SM

Mfr. #:
Manufacturer:
ON Semiconductor / Fairchild
Description:
Transistor Output Optocouplers Phototrans LoCurrent
Lifecycle:
New from this manufacturer.
Delivery:
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