MT4VDDT3264AY-40BJ1

PDF: 09005aef8085081a/Source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C16_32x64A.fm - Rev. E 11/08 EN
4 ©2003 Micron Technology, Inc. All rights reserved.
128MB, 256MB (x64, SR) 184-Pin DDR SDRAM UDIMM
Pin Assignments and Descriptions
Table 6: Pin Descriptions
Symbol Type Description
A0–A12 Input
Address inputs: Provide the row address for ACTIVE commands, and the
column address and auto precharge bit (A10) for READ/WRITE commands, to
select one location out of the memory array in the respective device bank. A10
sampled during a PRECHARGE command determines whether the PRECHARGE
applies to one device bank (A10 LOW, device bank selected by BA0, BA1) or all
device banks (A10 HIGH). The address inputs also provide the op-code during a
MODE REGISTER SET command. BA0 and BA1 define which mode register
(mode register or extended mode register) is loaded during the LOAD MODE
REGISTER command.
BA0, BA1 Input
Bank address: BA0 and BA1 define the device bank to which an ACTIVE,
READ, WRITE, or PRECHARGE command is being applied.
CK1, CK1#,
CK2, CK2#
Input
Clock: CK and CK# are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and the
negative edge of CK#. Output data (DQ and DQS) is referenced to the
crossings of CK and CK#.
CKE0 Input
Clock enable: CKE (registered HIGH) activates and CKE (registered LOW)
deactivates the internal clock, input buffers, and output drivers.
DM0–DM7 Input
Input data mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write
access. DM is sampled on both edges of DQS. Although DM pins are input-only,
the DM loading is designed to match that of DQ and DQS pins.
RAS#, CAS#, WE# Input
Command inputs: RAS#, CAS#, and WE# (along with S#) define the command
being entered.
S0# Input
Chip selects: S# enables (registered LOW) and disables (registered HIGH) the
command decoder.
SA0–SA2 Input
Presence-detect address inputs: These pins are used to configure the SPD
EEPROM address range on the I
2
C bus
SCL Input
Serial clock for SPD EEPROM: SCL is used to synchronize the presence-detect
data transfer to and from the module.
DQ0–DQ63 I/O
Data input/output: Data bus.
DQS0–DQS7 I/O
Data strobe: Output with read data, input with write data. DQS is edge-
aligned with read data, center-aligned with write data. Used to capture data.
SDA I/O
Serial data: SDA is a bidirectional pin used to transfer addresses and data into
and out of the presence-detect portion of the module.
Vdd/Vddq Supply
Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V).
VddSPD Supply
Serial EEPROM positive power supply: +2.3V to +3.6V.
Vref Supply
SSTL_2 reference voltage (Vdd/2).
Vss Supply
Ground.
NC
No connect: These pins are not connected on the module.
NF
No function: Connected within the module but provides no functionality.
PDF: 09005aef8085081a/Source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C16_32x64A.fm - Rev. E 11/08 EN
5 ©2003 Micron Technology, Inc. All rights reserved.
128MB, 256MB (x64, SR) 184-Pin DDR SDRAM UDIMM
Functional Block Diagram
Functional Block Diagram
Figure 2: Functional Block Diagram
DM3
DM2
DQ0
DQ1
DQ2
DQ3
DM0
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
U1
DQ12
DQ13
DQ14
DQ15
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
U2
DQ28
DQ29
DQ30
DQ31
DQ40
DQ41
DQ42
DQ43
U4
DM4
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
U5
DQ60
DQ61
DQ62
DQ63
DM1
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DM5
DM6
DM7
CS#
LDM
UDM
S0#
BA0–BA1
RAS#
CAS#
WE#
CKE0
DDR SDRAM
CK1
CK2
DDR SDRAM
U1, U2
DDR SDRAM
U4, U5
DQS0
UDQS
DQS1
LDQS
DQS2
DQS3
DQS7
DQS6
DQS5
DQS4
CK2#
CK1#
DDR SDRAM
DDR SDRAM
DDR SDRAM
DDR SDRAM
U6
Vref
Vss
DDR SDRAM
DDR SDRAM
VddSPD
SPD EEPROM
A0–A12
A0–A12 DDR SDRAM
LDM
UDM
UDQS
LDQS
LDM
UDM
UDQS
LDQS
LDM
UDM
UDQS
LDQS
Vdd/Vddq
DDR SDRAM
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
CK0
CK0#
A0
SPD EEPROM
A1
A2
SA0
SA1
SA2
SDA
SCL
WP
Vss
CS#
CS#
CS#
PDF: 09005aef8085081a/Source: 09005aef806e129d Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD4C16_32x64A.fm - Rev. E 11/08 EN
6 ©2003 Micron Technology, Inc. All rights reserved.
128MB, 256MB (x64, SR) 184-Pin DDR SDRAM UDIMM
General Description
General Description
The MT4VDDT1664A and MT4VDDT3264A are high-speed CMOS, dynamic random
access 128MB and 256MB and memory modules organized in a x64 configuration. These
modules use DDR SDRAM devices with four internal banks.
DDR SDRAM modules use a double data rate architecture to achieve high-speed opera-
tion. The double data rate architecture is essentially a 2n-prefetch architecture with an
interface designed to transfer two data words per clock cycle at the I/O pins. A single
read or write access for DDR SDRAM modules effectively consists of a single
2n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and two corre-
sponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted externally, along with data, for use in
data capture at the receiver. DQS is a strobe transmitted by the DDR SDRAM during
READs and by the memory controller during WRITEs. DQS is edge-aligned with data for
READs and center-aligned with data for WRITEs.
DDR SDRAM modules operate from differential clock inputs (CK and CK#); the crossing
of CK going HIGH and CK# going LOW will be referred to as the positive edge of CK.
Control, command, and address signals are registered at every positive edge of CK. Input
data is registered on both edges of DQS, and output data is referenced to both edges of
DQS, as well as to both edges of CK.
Serial Presence-Detect Operation
DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a
256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module
type and various DDR SDRAM organizations and timing parameters. The remaining 128
bytes of storage are available for use by the customer. System READ/WRITE operations
between the master (system logic) and the slave EEPROM device occur via a standard
I
2
C bus using the DIMM’s SCL (clock) and SDA (data) signals, together with SA[2:0],
which provide eight unique DIMM/EEPROM addresses. Write protect (WP) is connected
to Vss, permanently disabling hardware write protect.

MT4VDDT3264AY-40BJ1

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR SDRAM 256MB 184UDIMM
Lifecycle:
New from this manufacturer.
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