RJP60F0DPM Preliminary
R07DS0585EJ0100 Rev.1.00 Page 3 of 6
Nov 25, 2011
Main Characteristics
100
10
0.1
1
0.01
Typical Output Characteristics
100
80
60
40
20
12345
Collector Current I
C
(A)
0
0
Collector to Emitter Voltage V
CE
(V)
Ta = 25
°
C
Pulse Test
Pulse Test
Ta = 25
°
C
V
GE
= 8.4 V
8.6 V
8.8 V
9.2 V
9.4 V
9.6 V
9.8 V
9 V
15 V
13 V
10 V
11 V
1.0
1.4
1.8
2.6
2.2
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Gate to Emitter Voltage V
GE
(V)
Typical Transfer Characteristics
Collector Current I
C
(A)
468 1210
6
V
CE
= 10 V
Pulse Test
Gate to Emitter Voltage V
GE
(V)
25°C
–25°C
Tc = 75°C
Ta = 25
°
C
Pulse Test
8 10 12 181614 20
I
C
= 50 A
25 A
15 A
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
−25 0257512550 100 150
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Junction Temparature Tj (
°
C)
25 A
15 A
I
C
= 50 A
1.0
1.2
1.8
1.4
2.2
1.6
2.0
V
GE
= 15 V
Pulse Test
Collector Current I
C
(A)
Maximum Safe Operation Area
1000
100
10
0.1 1 10 100
1
0.01
0.1
0.001
1000
Collector to Emitter Voltage V
CE
(V)
Tc = 25
°
C
1 shot pulse
PW = 10 μs
100 μs
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Junction Temparature Tj (
°
C)
0
2
6
4
8
10
−25 0257512550 100 150
V
CE
= 10 V
Pulse Test
1 mA
I
C
= 10 mA
