Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
RJP60F0DPM-00#T1
P1-P3
P4-P6
P7-P7
RJP60F0DPM
Preliminary
R07DS0585EJ0100 Rev.1.00
Page 4 of 6
Nov 25, 2011
Ca
p
acitance C (
p
F)
1
10
100
1000
10000
01
0
0
5
01
5
0
200
2
5
0
300
Gate C
h
arge Qg (nc)
D
y
namic In
pu
t C
h
aracteri
s
tic
s
(T
yp
ical)
T
yp
ical Ca
p
acitance
vs
.
Collector to Emitter
V
oltage
8
00
6
00
400
200
0
0
1
6
12
8
4
0
24
12
3
6
4
8
6
0
I
C
= 2
5
A
Ta = 2
5
°
C
V
GE
V
CE
V
CC
=
6
00
V
300
V
V
CC
=
6
00
V
300
V
Collector to Emitter
V
oltage
V
CE
(
V
)
Collector to Emitter
V
oltage
V
CE
(
V
)
Gate to Emitter
V
oltage
V
GE
(
V
)
Cie
s
Coe
s
Cre
s
V
GE
= 0
V
f
= 1 MHz
Ta = 2
5
°
C
1
10
100
1000
Switc
h
ing C
h
aracteri
s
tic
s
(T
yp
ical) (1)
Switc
h
ing T
ime t (n
s
)
11
0
1
0
0
Colloctor C
u
rrent I
C
(A)
t
d(o
ff
)
t
d(on)
t
f
t
r
V
CC
= 300
V
,
V
GE
= 1
5
V
Rg =
5
Ω
, T
a =
2
5
°
C, Re
s
i
s
ti
v
e load
Switc
h
ing C
h
aracteri
s
tic
s
(T
yp
ical) (2)
Switc
h
ing T
ime t (n
s
)
11
0
1
0
0
t
d(o
ff
)
t
d(on)
t
f
t
r
10
100
1000
V
CC
= 300
V
,
V
GE
= 1
5
V
I
C
= 30
A, T
a = 2
5
°
C, Re
s
iti
v
e load
Gate Re
s
i
s
tance Rg (
Ω
)
Switc
h
ing C
h
aracteri
s
tic
s
(T
yp
ical) (3)
Switc
h
ing T
ime t (n
s
)
2
55
0
75
100
12
5
1
5
0
t
d(o
ff
)
t
d(on)
10
100
1000
Ca
s
e T
em
p
erat
u
re
T
c (
°
C)
t
f
t
r
V
CC
= 300
V
,
V
GE
= 1
5
V
I
C
= 30
A, Rg =
5
Ω
, Re
s
iti
v
e load
RJP60F0DPM
Preliminary
R07DS0585EJ0100 Rev.1.00
Page 5 of 6
Nov 25, 2011
P
uls
e
Wi
dt
h
P
W
(
s
)
N
orma
li
zed
T
ran
si
ent
Th
erma
l I
m
p
edance
γ
s
(t)
N
orma
li
zed
T
ran
si
ent
Th
erma
l I
m
p
edance
vs.
P
uls
e
Wi
dt
h
0
.
01
0
.
1
1
10
10
μ
100
μ
1
m1
0
m
100
m
1
100
10
P
DM
P
W
T
D
=
P
W
T
θ
j –
c(t)
=
γ
s
(t)
•
θ
j –
c
θ
j –
c
=
3
.
12
5
°
C
/W
,
T
c
=
2
5
°
C
0
.
0
5
0
.
2
0
.
1
0
.5
D
=
1
0
.
02
T
c
=
2
5
°
C
0
.
01
1
sh
ot
puls
e
Sw
i
tc
hi
ng
Ti
me
T
e
s
t
C
i
rc
ui
t
W
a
v
e
f
orm
D
i
ode
c
l
am
p
D
.U.T
Rg
L
V
CC
t
d(o
ff
)
t
o
ff
t
on
t
d(on)
t
f
t
r
t
ta
il
9
0
%
9
0
%
9
0
%
10
%
10
%
10
%
10
%
1
%
V
G
E
I
C
V
C
E
RJP60F0DPM
Preliminary
R07DS0585EJ0100 Rev.1.00
Page 6 of 6
Nov 25, 2011
Package Dimensions
0.
66
1
5
.
6
± 0.3
5
.
5
± 0.3
3.2 ± 0.3
5
.4
5
± 0.
5
4.0 ± 0.3
5
.0 ± 0.3
2.
7
± 0.3
1
9
.
9
± 0.3
21.0 ± 0.
5
1.
6
0.
86
φ
3.2
+ 0.4
– 0.2
2.
6
0.
86
5
.4
5
± 0.
5
5
.0 ± 0.3
+ 0.2
– 0.1
2.0 ± 0.3
0.
9
+ 0.2
– 0.1
Pre
v
io
us
Code
PRSS0003ZA-A
TO-3PFM / TO-3PFM
V
MASS[T
yp
.]
5
.2g
SC-
9
3
RENESAS Code
J
EITA Package Code
U
nit: mm
Package Name
TO-3PFM
Ordering Information
Orderable Part No.
Quantity
Shipping Container
RJP60F0DPM-00#T1
360 pcs
Box (Tube)
P1-P3
P4-P6
P7-P7
RJP60F0DPM-00#T1
Mfr. #:
Buy RJP60F0DPM-00#T1
Manufacturer:
Renesas Electronics
Description:
IGBT Transistors Power Module - Lead Free
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
RJP60F0DPM-00#T1
