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NCV898031D1R2G

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
© Semiconductor Components Industries, LLC, 2017
January, 2017 − Rev. 14
1 Publication Order Number:
NCV898031/D
NCV898031
2 MHz Non-Synchronous
SEPIC/Boost Controller
The NCV898031 is an adjustable output non−synchronous 2 MHz
SEPIC/boost controller which drives an external N−channel
MOSFET. The device uses peak current mode control with internal
slope compensation. The IC incorporates an internal regulator that
supplies charge to the gate driver.
Protection features include internally−set soft−start, undervoltage
lockout, cycle−by−cycle current limiting and thermal shutdown.
Additional features include low quiescent current sleep mode and
microprocessor compatible enable pin.
Features
• Peak Current Mode Control with Internal Slope Compensation
• 1.2 V $2% Reference Voltage
• 2 MHz Fixed Frequency Operation
• Wide Input Voltage Range of 3.2 V to 40 V, 45 V Load Dump
• Input Undervoltage Lockout (UVLO)
• Internal Soft−Start
• Low Quiescent Current in Sleep Mode (< 10 mA Typical)
• Cycle−by−Cycle Current Limit Protection
• Hiccup−Mode Overcurrent Protection (OCP)
• Hiccup−Mode Short−Circuit Protection (SCP)
• Thermal Shutdown (TSD)
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• This is a Pb−Free Device
Typical Applications
• Small Form Factor Point−of−Load Power Regulation
• Headlamps
• Backlighting
MARKING
DIAGRAM
www.onsemi.com
SOIC−8
D SUFFIX
CASE 751
1
8
PIN CONNECTIONS
1 8
2
3
4
7
6
5
(Top View)
EN
ISNS
GND
GDRV
VFB
VC
VIN
VDRV
898031 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
898031
ALYW
G
1
8
Device Package Shipping
†
ORDERING INFORMATION
NCV898031D1R2G SOIC−8
(Pb−Free)
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCV898031
www.onsemi.com
2
Gm
CSA
L1
SC
CLK
ENABLE
EN
VC
PWN
R
C
C
C
R
SNS
R
F1
V
ref
C
DRV
V
g
V
o
C
g
C
o
Figure 1. Simplified Block Diagram and Application Schematic
8
3
2
4
6
GND
ISNS
GDRV
VIN
VFB
5
VDRV
OSC
Q
D
TEMP
VDRV
DRIVE
LOGIC
CL
SCP
SS
FAULT
LOGIC
1
7
+
●
L2
●
C
CPL
R
F2
PACKAGE PIN DESCRIPTIONS
Pin No.
Pin
Symbol
Function
1 EN Enable input. The part is disabled into sleep mode when this pin is brought low for longer than the enable
time−out period.
2 ISNS Current sense input. Connect this pin to the source of the external N−MOSFET, through a current−sense
resistor to ground to sense the switching current for regulation and current limiting.
3 GND Ground reference.
4 GDRV Gate driver output. Connect to gate of the external N−MOSFET. A series resistance can be added from
GDRV to the gate to tailor EMC performance. An R
GND
= 15 kW (typical) GDRV−GND resistor is strongly
recommended.
5 VDRV Driving voltage. Internally−regulated supply for driving the external N−MOSFET, sourced from VIN. Bypass
with a 1.0 mF ceramic capacitor to ground.
6 VIN Input voltage. If bootstrapping operation is desired, connect a diode from the input supply to VIN, in addi-
tion to a diode from the output voltage to VDRV and/or VIN.
7 VC Output of the voltage error amplifier. An external compensator network from VC to GND is used to stabilize
the converter.
8 VFB Output voltage feedback. A resistor from the output voltage to VFB with another resistor from VFB to GND
creates a voltage divider for regulation and programming of the output voltage.
NCV898031
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3
ABSOLUTE MAXIMUM RATINGS (Voltages are with respect to GND, unless otherwise indicated)
Rating
Value Unit
Dc Supply Voltage (VIN) −0.3 to 40 V
Peak Transient Voltage (Load Dump on VIN) 45 V
Dc Supply Voltage (VDRV, GDRV) 12 V
Peak Transient Voltage (VFB) −0.3 to 6 V
Dc Voltage (VC, VFB, ISNS) −0.3 to 3.6 V
Dc Voltage (EN) −0.3 to 6 V
Dc Voltage Stress (VIN − VDRV)* −0.7 to 40 V
Operating Junction Temperature −40 to 150 °C
Storage Temperature Range −65 to 150 °C
Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C 265 peak °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*An external diode from the input to the VIN pin is required if bootstrapping VDRV and VIN off of the output voltage.
PACKAGE CAPABILITIES
Characteristic Value Unit
ESD Capability (All Pins) Human Body Model
Machine Model
w2.0
w200
KV
V
Moisture Sensitivity Level 1
Package Thermal Resistance Junction−to−Ambient, R
q
JA
(Note 1)
100 °C/W
1. Value based on copper are of 650 mm
2
(or 1 in
2
) of 1 oz copper thickness and FR4 PCB substrate.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

NCV898031D1R2G

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Buy NCV898031D1R2G
Manufacturer:
ON Semiconductor
Description:
Switching Voltage Regulators 2 MHZ SMPS
Lifecycle:
New from this manufacturer.
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