NX3DV2567 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 9 November 2011 7 of 20
NXP Semiconductors
NX3DV2567
Low-ohmic four-pole double-throw analog switch
11.2 ON resistance
[1] Typical values are measured at T
amb
= 25 C.
[2] Measured at identical V
CC
, temperature and input voltage.
V
I
=0.3VorV
CC
0.3 V; V
O
=V
CC
0.3 V or 0.3 V.
Fig 6. Test circuit for measuring ON-state leakage current
I
S
001aam600
V
I
V
O
S
nZ
GND
nY0
V
IL
or V
IH
nY1
switch
1
2
V
CC
Sswitch
V
IH
1
V
IL
2
Table 8. ON resistance
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 13.
Symbol Parameter Conditions T
amb
= 40 C to +85 C T
amb
= 40 C to +125 C Unit
Min Typ
[1]
Max Min Max
Supply path switch
R
ON
ON resistance V
I
=GNDtoV
CC
;
I
SW
= 100 mA; see Figure 7
V
CC
=1.8V; V
SW
= 0 V, 1.8 V - 0.5 0.75 - 0.85
V
CC
=2.7V; V
SW
= 0 V, 2.3 V - 0.45 0.7 - 0.8
R
ON
ON resistance
mismatch
between
channels
V
I
=GNDtoV
CC
; I
SW
= 100 mA
[2]
V
CC
=2.7V; V
SW
=0V - 0.1 - - -
Data path switches
R
ON
ON resistance V
I
=GNDtoV
CC
; I
SW
=20mA;
see Figure 7
V
CC
=1.8V; V
SW
= 0 V, 1.8 V - 7.0 10.0 - 11.0
V
CC
=2.7V; V
SW
= 0 V, 2.3 V - 6.0 9.5 - 10.5
R
ON
ON resistance
mismatch
between
channels
V
I
=GNDtoV
CC
; I
SW
=20mA
[2]
V
CC
=2.7V; V
SW
=0V - 0.2 - - -
