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MT8KSF25664HZ-1G4D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
4. For further information, refer to technical note TN-00-08: “Thermal Applications,”
available on Micron’s Web site.
5. The refresh rate is required to double when 85°C < T
C
≤ 95°C.
1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3 SODIMM
Electrical Specifications
PDF: 09005aef83b0ef39
ksf8c128_256x64hz – Rev. D 4/13 EN
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3 SODIMM
DRAM Operating Conditions
PDF: 09005aef83b0ef39
ksf8c128_256x64hz – Rev. D 4/13 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 1GB
Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
TBD 760 680 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
TBD 880 800 mA
Precharge power-down current: Slow exit I
DD2P0
TBD 80 64 mA
Precharge power-down current: Fast exit I
DD2P1
TBD 240 200 mA
Precharge quiet standby current I
DD2Q
TBD 440 360 mA
Precharge standby current I
DD2N
TBD 440 360 mA
Precharge standby ODT current I
DD2NT
TBD 600 520 mA
Active power-down current I
DD3P
TBD 296 240 mA
Active standby current I
DD3N
TBD 480 400 mA
Burst read operating current I
DD4R
TBD 1160 960 mA
Burst write operating current I
DD4W
TBD 1160 960 mA
Refresh current I
DD5
TBD 1480 1400 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
TBD 48 48 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
TBD 72 72 mA
All banks interleaved read current I
DD7
TBD 2880 2320 mA
Reset current I
DD8
TBD 96 80 mA
Table 12: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision D)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
TBD 680 600 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
TBD 800 760 mA
Precharge power-down current: Slow exit I
DD2P0
TBD 96 96 mA
Precharge power-down current: Fast exit I
DD2P1
TBD 240 200 mA
Precharge quiet standby current I
DD2Q
TBD 280 240 mA
Precharge standby current I
DD2N
TBD 296 256 mA
Precharge standby ODT current I
DD2NT
TBD 360 320 mA
Active power-down current I
DD3P
TBD 280 240 mA
Active standby current I
DD3N
TBD 320 280 mA
Burst read operating current I
DD4R
TBD 1280 1120 mA
1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83b0ef39
ksf8c128_256x64hz – Rev. D 4/13 EN
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

MT8KSF25664HZ-1G4D1

Mfr. #:
Buy MT8KSF25664HZ-1G4D1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 2GB 204SODIMM
Lifecycle:
New from this manufacturer.
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