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MT8KSF25664HZ-1G4D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
Table 12: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision D) (Continued)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Burst write operating current I
DD4W
TBD 1320 1160 mA
Refresh current I
DD5
TBD 1600 1520 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
TBD 96 96 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
TBD 120 120 mA
All banks interleaved read current I
DD7
TBD 3080 2680 mA
Reset current I
DD8
TBD 112 112 mA
Table 13: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision H)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
600 560 520 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
760 720 680 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 96 mA
Precharge power-down current: Fast exit I
DD2P1
296 256 216 mA
Precharge quiet standby current I
DD2Q
336 296 256 mA
Precharge standby current I
DD2N
344 304 272 mA
Precharge standby ODT current I
DD2NT
416 376 336 mA
Active power-down current I
DD3P
376 336 296 mA
Active standby current I
DD3N
416 376 336 mA
Burst read operating current I
DD4R
1240 1120 1000 mA
Burst write operating current I
DD4W
1240 1120 1000 mA
Refresh current I
DD5
1520 1480 1440 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 96 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
120 120 120 mA
All banks interleaved read current I
DD7
2040 1920 1800 mA
Reset current I
DD8
112 112 112 mA
1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83b0ef39
ksf8c128_256x64hz – Rev. D 4/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Table 14: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision M)
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 2Gb (256 Meg x 8) com-
ponent data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
I
DD0
480 440 400 mA
Operating current 1: One bank ACTIVATE-to-READ-
to-PRECHARGE
I
DD1
600 560 520 mA
Precharge power-down current: Slow exit I
DD2P0
96 96 96 mA
Precharge power-down current: Fast exit I
DD2P1
264 224 184 mA
Precharge quiet standby current I
DD2Q
264 224 184 mA
Precharge standby current I
DD2N
280 240 200 mA
Precharge standby ODT current I
DD2NT
320 280 240 mA
Active power-down current I
DD3P
376 336 296 mA
Active standby current I
DD3N
416 376 336 mA
Burst read operating current I
DD4R
1120 1000 880 mA
Burst write operating current I
DD4W
1000 880 760 mA
Refresh current I
DD5
1520 1480 1440 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
96 96 96 mA
Self refresh temperature current (SRT-enabled): MAX
T
C
= 95°C
I
DD6ET
120 120 120 mA
All banks interleaved read current I
DD7
1760 1640 1520 mA
Reset current I
DD8
112 112 112 mA
1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef83b0ef39
ksf8c128_256x64hz – Rev. D 4/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
Temperature Sensor with Serial Presence-Detect EEPROM
The temperature sensor continuously monitors the module's temperature and can be
read back at any time over the I
2
C bus shared with the SPD EEPROM. Refer to JEDEC
standard No. 21-C page 4.7-1, "Definition of the TSE2002av, Serial Presence Detect with
Temperature Sensor."
Serial Presence-Detect
For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD.
Table 15: Temperature Sensor with SPD EEPROM Operating Conditions
Parameter/Condition Symbol Min Max Units
Supply voltage V
DDSPD
3.0 3.6 V
Supply current: V
DD
= 3.3V I
DD
– 2.0 mA
Input high voltage: Logic 1; SCL, SDA V
IH
V
DDSPD
x 0.7 V
DDSPD
+ 1 V
Input low voltage: Logic 0; SCL, SDA V
IL
–0.5 V
DDSPD
x 0.3 V
Output low voltage: I
OUT
= 2.1mA V
OL
– 0.4 V
Input current I
IN
–5.0 5.0 µA
Temperature sensing range – –40 125 °C
Temperature sensor accuracy (class B) – –1.0 1.0 °C
Table 16: Temperature Sensor and SPD EEPROM Serial Interface Timing
Parameter/Condition Symbol Min Max Units
Time bus must be free before a new transition can
start
t
BUF 4.7 – µs
SDA fall time
t
F 20 300 ns
SDA rise time
t
R – 1000 ns
Data hold time
t
HD:DAT 200 900 ns
Start condition hold time
t
H:STA 4.0 – µs
Clock HIGH period
t
HIGH 4.0 50 µs
Clock LOW period
t
LOW 4.7 – µs
SCL clock frequency
t
SCL 10 100 kHz
Data setup time
t
SU:DAT 250 – ns
Start condition setup time
t
SU:STA 4.7 – µs
Stop condition setup time
t
SU:STO 4.0 – µs
1GB, 2GB (x64, SR) 204-Pin 1.35V DDR3 SODIMM
Temperature Sensor with Serial Presence-Detect EEPROM
PDF: 09005aef83b0ef39
ksf8c128_256x64hz – Rev. D 4/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2009 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

MT8KSF25664HZ-1G4D1

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MODULE DDR3 SDRAM 2GB 204SODIMM
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