OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MJE18006

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 7
1 Publication Order Number:
MJE18006/D
MJE18006G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE18006G has an applications specific state−of−the−art die
designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.
Features
• Improved Efficiency Due to Low Base Drive Requirements:
♦ High and Flat DC Current Gain h
FE
♦ Fast Switching
♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail)
• Tight Parametric Distributions are Consistent Lot−to−Lot
• Standard TO−220
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage V
CEO
450 Vdc
Collector−Emitter Breakdown Voltage V
CES
1000 Vdc
Emitter−Base Voltage V
EBO
9.0 Vdc
Collector Current − Continuous
− Peak (Note 1)
I
C
I
CM
6.0
15
Adc
Base Current − Continuous
− Peak (Note 1)
I
B
I
BM
4.0
8.0
Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
P
D
100
0.8
W
W/_C
Operating and Storage Temperature T
J
, T
stg
−65 to 150
_C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.25
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
T
L
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
POWER TRANSISTOR
6.0 AMPERES
1000 VOLTS − 100 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
http://onsemi.com
MARKING DIAGRAM
2
3
MJE18006G
AY WW
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
Device Package Shipping
ORDERING INFORMATION
MJE18006G TO−220
(Pb−Free)
50 Units / Rail
MJE18006G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise specified)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH) V
CEO(sus)
450 − − Vdc
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0) I
CEO
− − 100
mAdc
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0)
(T
C
= 125_C)
Collector Cutoff Current (V
CE
= 800 V, V
EB
= 0) (T
C
= 125_C)
I
CES
−
−
−
−
−
−
100
500
100
mAdc
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I
C
= 0) I
EBO
− − 100
mAdc
ON CHARACTERISTICS
Base−Emitter Saturation Voltage (I
C
= 1.3 Adc, I
B
= 0.13 Adc)
Base−Emitter Saturation Voltage (I
C
= 3.0 Adc, I
B
= 0.6 Adc)
V
BE(sat)
−
−
0.83
0.94
1.2
1.3
Vdc
Collector−Emitter Saturation Voltage
(I
C
= 1.3 Adc, I
B
= 0.13 Adc)
(T
C
= 125_C)
(I
C
= 3.0 Adc, I
B
= 0.6 Adc)
(T
C
= 125_C)
V
CE(sat)
−
−
−
−
0.25
0.27
0.35
0.4
0.6
0.65
0.7
0.8
Vdc
DC Current Gain (I
C
= 0.5 Adc, V
CE
= 5.0 Vdc)
(T
C
= 125_C)
DC Current Gain (I
C
= 3.0 Adc, V
CE
= 1.0 Vdc)
(T
C
= 125_C)
DC Current Gain (I
C
= 1.3 Adc, V
CE
= 1.0 Vdc) (T
C
= 25 to 125_C)
DC Current Gain (I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
h
FE
14
−
6.0
5.0
11
10
−
32
10
8.0
17
22
34
−
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz) f
T
− 14 − MHz
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz) C
ob
− 75 120 pF
Input Capacitance (V
EB
= 8.0 V) C
ib
− 1000 1500 pF
Dynamic Saturation Voltage:
Determined 1.0 ms and
3.0 ms respectively after
rising I
B1
reaches 90% of
final I
B1
(see Figure 18)
(I
C
= 1.3 Adc
I
B1
= 130 mAdc
V
CC
= 300 V)
1.0 ms
(T
C
= 125°C)
V
CE(dsat)
−
−
5.5
12
−
−
V
3.0 ms
(T
C
= 125°C)
−
−
3.0
7.0
−
−
(I
C
= 3.0 Adc
I
B1
= 0.6 Adc
V
CC
= 300 V)
1.0 ms
(T
C
= 125°C)
−
−
9.5
14.5
−
−
3.0 ms
(T
C
= 125°C)
−
−
2.0
7.5
−
−
SWITCHING CHARACTERISTICS: Resistive Load (D.C. v 10%, Pulse Width = 20 ms)
Turn−On Time
(I
C
= 3.0 Adc, I
B1
= 0.6 Adc,
I
B2
= 1.5 Adc, V
CC
= 300 V)
(T
C
= 125°C)
t
on
−
−
90
100
180
−
ns
Turn−Off Time
(T
C
= 125°C)
t
off
−
−
1.7
2.1
2.5
−
ms
Turn−On Time
(I
C
= 1.3 Adc, I
B1
= 0.13 Adc,
I
B2
= 0.65 Adc, V
CC
= 300 V)
(T
C
= 125°C)
t
on
−
−
200
130
300
−
ns
Turn−Off Time
(T
C
= 125°C)
t
off
−
−
1.2
1.5
2.5
−
ms
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, V
CC
= 15 V, L = 200 mH)
Fall Time
(I
C
= 1.5 Adc, I
B1
= 0.13 Adc,
I
B2
= 0.65 Adc)
(T
C
= 125°C)
t
fi
−
−
100
120
180
−
ns
Storage Time
(T
C
= 125°C)
t
si
−
−
1.5
1.9
2.5
−
ms
Crossover Time
(T
C
= 125°C)
t
c
−
−
220
230
350
−
ns
Fall Time
(I
C
= 3.0 Adc, I
B1
= 0.6 Adc,
I
B2
= 1.5 Adc)
(T
C
= 125°C)
t
fi
−
−
85
120
150
−
ns
Storage Time
(T
C
= 125°C)
t
si
−
−
2.15
2.75
3.2
−
ms
Crossover Time
(T
C
= 125°C)
t
c
−
−
200
310
300
−
ns
2. Proper strike and creepage distance must be provided.
MJE18006G
http://onsemi.com
3
h
FE
, DC CURRENT GAIN
I
C
, COLLECTOR CURRENT (AMPS)
T
J
= 125°C
C, CAPACITANCE (pF)
0.01
100
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
h
FE
, DC CURRENT GAIN
Figure 2. DC Current Gain @ 5 Volts
V
CE
, VOLTAGE (VOLTS)
Figure 3. Collector Saturation Region Figure 4. Collector−Emitter Saturation Voltage
Figure 5. Base−Emitter Saturation Region Figure 6. Capacitance
10
1
110
100
10
1
0.01 0.1 1 10
2
0.01
I
B
, BASE CURRENT (AMPS)
10
1
0.01
0.01
I
C
COLLECTOR CURRENT (AMPS)
0.1
1.3
1
0.8
0.4
0.01
I
C
, COLLECTOR CURRENT (AMPS)
0.1 1 10
1000
100
1
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1 1000
1
0
0.1
110
10000
10
0.1
0.1 1 10
10
T
J
= 25°C
T
J
= -20°C
V
CE
= 1 V
T
J
= 125°C
T
J
= 25°C
T
J
= -20°C
V
CE
= 5 V
V
CE
, VOLTAGE (VOLTS)
I
C
/I
B
= 10
I
C
/I
B
= 5
V
BE
, VOLTAGE (VOLTS)
1.1
0.9
0.6
0.5
0.5
1.5
1.2
T
J
= 25°C
I
C
= 1 A 3 A 5 A 6 A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
C
/I
B
= 5
I
C
/I
B
= 10
2 A
100
0.7
C
ib
C
ob
TYPICAL STATIC CHARACTERISTICS
T
J
= 25°C
f = 1 MHz
P1-P3P4-P6P7-P7

MJE18006

Mfr. #:
Buy MJE18006
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 6A 450V 100W NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet