IRF7910TRPBF Datasheet IRF7910TRPBF, IRF7910PBF | P1-P3

www.irf.com 1

07/21/08

IRF7910PbF

HEXFET

®

Power MOSFET

Notes  through  are on page 8

Thermal Resistance

Absolute Maximum Ratings

Symbol Parameter Max. Units

V

DS

Drain-Source Voltage 12 V

V

GS

Gate-to-Source Voltage ± 12 V

I

D

@ T

A

= 25°C Continuous Drain Current, V

GS

@ 4.5V 10

I

D

@ T

A

= 70°C Continuous Drain Current, V

GS

@ 4.5V 7.9 A

I

DM

Pulsed Drain Current 79

P

D

@T

A

= 25°C Maximum Power Dissipation 2.0 W

P

D

@T

A

= 70°C Maximum Power Dissipation 1.3 W

Linear Derating Factor 16 mW/°C

T

J

, T

STG

Junction and Storage Temperature Range -55 to + 150 °C

SO-8

Applications

Benefits

l Ultra-Low Gate Impedance

l Very Low R

DS(on)

l Fully Characterized Avalanche Voltage

and Current

l High Frequency 3.3V and 5V input Point-

of-Load Synchronous Buck Converters for

Netcom and Computing Applications

l Power Management for Netcom,

Computing and Portable Applications

l Lead-Free

Symbol Parameter Typ. Max. Units

R

θJL

Junction-to-Drain Lead ––– 42

R

θJA

Junction-to-Ambient  ––– 62.5

°C/W

D1

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

V

DSS

R

DS(on)

max I

D

12V 15mΩ @V

GS

= 4.5V 10A

PD - 95336A

IRF7910PbF

2 www.irf.com

Symbol Parameter Min. Typ. Max. Units Conditions

I

S

Continuous Source Current MOSFET symbol

(Body Diode)

––– –––

showing the

I

SM

Pulsed Source Current integral reverse

(Body Diode) 

––– –––

p-n junction diode.

––– 0.85 1.3 V T

J

= 25°C, I

S

= 8.0A, V

GS

= 0V 

––– 0.70 ––– T

J

= 125°C, I

S

= 8.0A, V

GS

= 0V 

t

rr

Reverse Recovery Time ––– 50 75 ns T

J

= 25°C, I

F

= 8.0A, V

R

=12V

Q

rr

Reverse Recovery Charge ––– 60 90 nC di/dt = 100A/µs



t

rr

Reverse Recovery Time ––– 51 77 ns T

J

= 125°C, I

F

= 8.0A, V

R

=12V

Q

rr

Reverse Recovery Charge ––– 60 90 nC di/dt = 100A/µs



Dynamic @ T

J

= 25°C (unless otherwise specified)

ns

Symbol Parameter Typ. Max. Units

E

AS

Single Pulse Avalanche Energy ––– 100 mJ

I

AR

Avalanche Current ––– 8.0 A

Avalanche Characteristics

S

D

G

Diode Characteristics

1.8

79

A

Symbol Parameter Min. Typ. Max. Units Conditions

g

fs

Forward Transconductance 18 ––– ––– S V

DS

= 6.0V, I

D

= 8.0A

Q

g

Total Gate Charge ––– 17 26 I

D

= 8.0A

Q

gs

Gate-to-Source Charge ––– 4.4 ––– nC V

DS

= 6.0V

Q

gd

Gate-to-Drain ("Miller") Charge ––– 5.2 ––– V

GS

= 4.5V

Q

oss

Output Gate Charge ––– 16 ––– V

GS

= 0V, V

DS

= 10V

t

d(on)

Turn-On Delay Time ––– 9.4 ––– V

DD

= 6.0V

t

r

Rise Time ––– 22 ––– I

D

= 8.0A

t

d(off)

Turn-Off Delay Time ––– 16 ––– R

G

= 1.8Ω

t

f

Fall Time ––– 6.3 ––– V

GS

= 4.5V 

C

iss

Input Capacitance ––– 1730 ––– V

GS

= 0V

C

oss

Output Capacitance ––– 1340 ––– V

DS

= 6.0V

C

rss

Reverse Transfer Capacitance ––– 330 ––– pF ƒ = 1.0MHz

V

SD

Diode Forward Voltage

Static @ T

J

= 25°C (unless otherwise specified)

I

GSS

I

DSS

Drain-to-Source Leakage Current

R

DS(on)

Static Drain-to-Source On-Resistance mΩ

Symbol Parameter Min. Typ. Max. Units Conditions

V

(BR)DSS

Drain-to-Source Breakdown Voltage 12 ––– ––– V V

GS

= 0V, I

D

= 250µA

∆V

(BR)DSS

/∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C Reference to 25°C, I

D

= 1mA

––– 11.5 15 V

GS

= 4.5V, I

D

= 8.0A 

––– 20 50 V

GS

= 2.8V, I

D

= 5.0A

V

GS(th)

Gate Threshold Voltage 0.6 ––– 2.0 V V

DS

= V

GS

, I

D

= 250µA

––– ––– 100

µA

V

DS

= 9.6V, V

GS

= 0V

––– ––– 250 V

DS

= 9.6V, V

GS

= 0V, T

J

= 125°C

Gate-to-Source Forward Leakage ––– ––– 200 V

GS

= 12V

Gate-to-Source Reverse Leakage ––– ––– -200

nA

V

GS

= -12V

IRF7910PbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

1.0 2.0 3.0 4.0

V

GS

, Gate-to-Source Voltage (V)

1

10

100

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 150°C

V

DS

= 10V

20µs PULSE WIDTH

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

R , Drain-to-Source On Resistance

(Normalized)

DS(on)

V =

I =

GS

D

4.5V

10A

T

J

, Junction Temperature (°C)

0.1 1 10

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

1.5V

20µs PULSE WIDTH

Tj = 150°C

V

GS

TOP 10V

8.0V

5.0V

4.5V

3.5V

2.7V

2.0V

BOTTOM 1.5V

0.1 1 10

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

1.5V

20µs PULSE WIDTH

Tj = 25°C

V

GS

TOP 10V

8.0V

5.0V

4.5V

3.5V

2.7V

2.0V

BOTTOM 1.5V

IRF7910TRPBF

IRF7910TRPBF

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