Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IRF7910TRPBF
P1-P3
P4-P6
P7-P8
IRF7910PbF
4
www.irf.com
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
0.0
0.5
1.
0
1.
5
2.
0
V
SD
, S
ource-
toD
rai
n Vol
tage (
V)
0.1
1.0
10.0
100.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 150°
C
V
GS
= 0V
0
1
10
100
V
DS
, D
rai
n-t
oSour
ce Vol
tage (
V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°
C
Tj
=
150°C
Si
ngl
e Pul
se
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
1
10
100
V
DS
, D
rai
n-t
o-S
ource V
olt
age (V
)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
1
02
03
04
0
Q
G
Tot
al
Gate C
harge (
nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 9.
6V
V
DS
= 6.
0V
I
D
= 8.
0A
FOR TEST CIRCUIT
SEE FIG
URE 13
IRF7910PbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
No
t
es
:
1. Du
ty factor D =
t / t
2. Peak
T
=
P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rect
angular Puls
e Duration (
sec)
Thermal
Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D =
0.50
SING
LE PULSE
(TH
ERM
AL RESPO
NSE)
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(
off)
t
f
Fig 10b.
Switching Time Waveforms
V
DS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
10.0
I , D
rai
n Cur
rent
(A)
D
T
C
,
Case Temperature
(°C)
IRF7910PbF
6
www.irf.com
Fig 13.
On-Resistance Vs. Gate Voltage
Fig 12.
On-Resistance Vs. Drain Current
Fig 14a&b.
Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b.
Unclamped Inductive Test circuit
and Waveforms
Fig 15c.
Maximum Avalanche Energy
Vs. Drain Current
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulat
or
Same
T
ype
as
D.U.T
.
Current
Sampling
Resistors
+
-
V
GS
Q
G
Q
GS
Q
GD
V
G
Charge
t
p
V
(B
R)D
SS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.
T
L
V
DS
+
-
V
DD
DRIVE
R
A
15V
20V
25
50
75
100
125
150
0
50
100
150
200
250
Star
ting T ,
Juncti
on T
emperature
( C)
E , Singl
e Pulse Av
alanche E
nergy (mJ)
J
AS
°
I
D
TOP
B
OTTOM
3.6A
6.4A
8.0A
0
2
04
06
08
0
1
0
0
I
D
, D
r
ai
n C
ur
r
ent
(
A
)
0.0120
0.0125
0.0130
0.0135
0.0140
0.0145
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
V
GS
= 4.
5V
2.
5
3.
5
4.
5
5.
5
V
GS
,
G
ate -
to -
Sour
c
e Vol
t
age (
V
)
0.
010
0.
013
0.
015
0.
018
0.
020
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
Ω
)
I
D
= 8.
0A
P1-P3
P4-P6
P7-P8
IRF7910TRPBF
Mfr. #:
Buy IRF7910TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT DUAL NCh 12V 10A
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IRF7910TRPBF
IRF7910PBF