IRLML0100TRPbF
2 www.irf.com
Electric Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C
––– 190 235
––– 178 220
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.5 V
I
DSS
––– ––– 20
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 1.3 ––– Ω
gfs Forward Transconductance 5.7 ––– ––– S
Q
g
Total Gate Charge ––– 2.5 –––
Q
gs
Gate-to-Source Charge ––– 0.5 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 1.2 –––
t
d(on)
Turn-On Delay Time ––– 2.2 –––
t
r
Rise Time ––– 2.1 –––
t
d(off)
Turn-Off Delay Time ––– 9.0 –––
t
f
Fall Time ––– 3.6 –––
C
iss
Input Capacitance ––– 290 –––
C
oss
Output Capacitance ––– 27 –––
C
rss
Reverse Transfer Capacitance ––– 13 –––
Source - Drain Ratings and Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 20 30 ns
Q
rr
Reverse Recovery Charge ––– 13 20 nC
––– –––
––– –––
pF
A
1.1
7.0
V
DD
=50V
nA
nC
ns
V
DS
= V
GS
, I
D
= 25µA
V
DS
=100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
R
DS(on)
V
GS
= 10V, I
D
=
1.6A
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current µA
m
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 4.5V, I
D
=
1.3A
MOSFET symbol
showing the
V
DS
=50V
Conditions
V
GS
= 4.5V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
R
G
= 6.8Ω
V
GS
= 4.5V
di/dt = 100A/µs
V
GS
= 16V
V
GS
= -16V
T
J
= 25°C, I
S
= 1.1A, V
GS
= 0V
integral reverse
p-n junction diode.
V
DS
= 50V, I
D
= 1.6A
I
D
= 1.6A
I
D
= 1.0A
T
J
= 25°C, V
R
= 50V, I
F
=1.1A