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IRLML0100TRPBF

P1-P3P4-P6P7-P9P10-P10
IRLML0100TRPbF
4 www.irf.com
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
01234567
Q
G
Total Gate Charge (nC)
0
4
8
12
16
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
I
D
= 1.6A
0.4 0.6 0.8 1.0
V
SD
, Source-to-Drain Voltage (V)
0.01
0.1
1
10
100
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
A
= 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
IRLML0100TRPbF
www.irf.com 5
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
V
DS
9
0%
1
0%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
DS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0.0
0.5
1.0
1.5
2.0
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10
t
1
, Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
1000
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
IRLML0100TRPbF
6 www.irf.com
Fig 13. Typical On-Resistance Vs. Drain
Current
Fig 12. Typical On-Resistance Vs. Gate
Voltage
Fig 14b. Gate Charge Test Circuit
Fig 14a. Basic Gate Charge Waveform
1K
VCC
DUT
0
L
S
D
G
20K
Vds
Vgs
I
d
Vgs(th)
Qgs1
Qgs2QgdQgodr
2 4 6 8 10
V
GS,
Gate -to -Source Voltage (V)
150
200
250
300
350
400
450
500
550
600
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
I
D
= 1.6A
T
J
= 25°C
T
J
= 125°C
0 2 4 6 8
I
D
, Drain Current (A)
170
190
210
230
250
270
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
Ω
)
Vgs = 10V
Vgs = 4.5V
P1-P3P4-P6P7-P9P10-P10

IRLML0100TRPBF

Mfr. #:
Buy IRLML0100TRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 100V 1.6A 220mOhm 2.5nC Qg
Lifecycle:
New from this manufacturer.
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