Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
MG600Q2YS60A
Dual IGBTMOD™
Compact IGBT Series Module
600 Amperes/1200 Volts
2 7/05
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
Characteristics Symbol MG600Q2YS60A Units
Collector-Emitter Voltage V
CES
1200 Volts
Gate-Emitter Voltage V
GES
±20 Volts
Collector Current (DC) I
C
600 Amperes
Forward Current (DC) I
F
600 Amperes
Collector Dissipation (T
C
= 25°C) P
C
4300 Watts
Power Device Junction Temperature T
j
-20 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Mounting Torque, M5 Mounting Screws — 27 in-lb
Mounting Torque, M8 Main Terminal Screws — 88 in-lb
Module Weight (Typical) — 680 Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V
ISO
2500 Volts
Electrical and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Gate Leakage Current I
GES
V
GE
= ±20V, V
CE
= 0V — — ±10 µA
Collector Cutoff Current I
CES
V
CE
= 1200V, V
GE
= 0V — — 1.0 mA
Gate-Emitter Cutoff Voltage V
GE(off)
I
C
= 600mA,V
CE
= 5V 6.0 6.7 8.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
V
GE
= 15V, I
C
= 600A, T
j
= 25°C — 2.7 3.1 Volts
V
GE
= 15V, I
C
= 600A, T
j
= 125°C — 3.2 3.5 Volts
Input Capacitance C
ies
V
CE
= 10V, V
GE
= 0V, f = 1MHz — 41000 — pF
Gate-Emitter Voltage V
GE
13.0 15.0 17.0 Volts
Gate Resistance R
G
7.5 — 15.0 Ω
Inductive Load t
d(on)
— 0.3 — µs
Switching t
r
— 0.2 — µs
Times t
on
V
CC
= 600V, I
C
= 600A, — 0.5 — µs
t
d(off)
V
GE
= ±15V, R
G
= 7.5Ω — 1.3 — µs
t
f
— 0.1 0.3 µs
t
off
— 1.4 — µs
Forward Voltage V
F
I
F
= 600A, V
GE
= 0V, T
j
= 25°C — 2.2 3.2 Volts
I
F
= 600A, V
GE
= 0V, T
j
= 125°C — 2.0 — Volts
Reverse Recovery Time t
rr
I
F
= 600A, V
GE
= -15V, di/dt = 2000A/µs — 0.3 0.5 µs
Junction to Case Thermal Resistance R
th(j-c)Q
IGBT (Per 1/2 Module) — — 0.029 °C/Watt
R
th(j-c)D
FWDi (Per 1/2 Module) — — 0.056 °C/Watt
RTC Operating Current I
rtc
T
j
= 25°C 1200 — — Amperes
