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20090209b
Advanced Technical Information
LKK 47-06C5
Dual CoolMOS
™ 1)
Power MOSFET
Common Source Topology
DCB isoated package
Features
• fast CoolMOS
™
1)
power MOSFET
4
th
generation
- High blocking capability
- Lowest resistance
- Avalanche rated for unclamped
inductive switching (UIS)
- Low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• AC Switch
- power regulation of AC heating
- light dimming
• Power factor correction (PFC)
interleaved operation mode
• Push pull converter
1)
CoolMOS
™
is a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
MOSFET T1/T2
Symbol Conditions Maximum Ratings
V
DSS
T
VJ
= 25°C 600 V
V
D1D2
T
VJ
= 25°C ±600 V
V
GS
±20 V
I
D25
T
C
= 25°C 47 A
I
D90
T
C
= 90°C 32 A
E
AS
single pulse 1950 mJ
E
AR
repetitive 3 mJ
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
R
DSon
V
GS
= 10 V;
I
D
= 44 A 40 45 mΩ
R
DSon
total between D1 and D2 80 mΩ
V
G1S
= V
G2S
= 10 V;
I
D
= 44 A
V
GSth
V
DS
= V
GS
;
I
D
= 3 mA 2.5 3 3.5 V
I
DSS
V
DS
= V
DSS
;
V
GS
= 0 V; T
VJ
= 25°C 10 µA
T
VJ
= 125°C 50 µA
I
GSS
V
GS
= ±20 V; V
DS
= 0 V 100 nA
C
iss
V
GS
= 0 V; V
DS
= 100 V 6800 pF
C
oss
f = 1 MHz 320 pF
Q
g
150 190 nC
Q
gs
35 nC
Q
gd
50 nC
t
d(on)
30 ns
t
r
20 ns
t
d(off)
100 ns
t
f
10 ns
R
thJC
0.45 K/W
R
thCH
with heatsink compound 0.25 K/W
V
GS
= 0 to10 V; V
DS
= 400 V; I
D
= 44 A
V
GS
= 10 V; V
DS
= 400 V;
I
D
= 44 A; R
G
= 3.3 Ω
I
D
= 11 A; T
C
= 25°C
V
DSS
= 600 V
I
D25
=47 A
R
DS(on)
max
=45 m
ΩΩ
ΩΩ
Ω
//
//
/MOSFET
1
2
3
4
5
4
2
3
1
5
D1
D2
T1
T2
G1
G2
S
