LKK47-06C5

Mfr. #:: LKK47-06C5
Manufacturer:: Littelfuse
Description:: MOSFET 47 Amps 600V
Lifecycle:: New from this manufacturer.
Datasheet:: LKK47-06C5 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: LKK47-06C5 Datasheet LKK47-06C5 Datasheet (P4)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: IXYS

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-264-3

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 47 A

Rds On - Drain-Source Resistance:: 45 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 480 W

Configuration:: Dual

Channel Mode:: Enhancement

Tradename:: COOLMOS

Packaging:: Tube

Series:: LKK47

Transistor Type:: 2 N-Channel

Brand:: IXYS

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 20 ns

Factory Pack Quantity:: 25

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 100 ns

Typical Turn-On Delay Time:: 30 ns

Unit Weight:: 0.264555 oz

Tags: LKK

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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LKK47-06C5 Description

***ical: Trans MOSFET N-CH 600V 47A 5-Pin(5+Tab) ISOPLUS 264

***i-Key: MOSFET 2N-CH 600V 47A ISOPLUS264

***ure Electronics: Single N-Channel 600 V 40 mOhm 107 nC CoolMOS Power Mosfet - TO-220-3

***ark: Mosfet, N-Ch, 600V, 50A, To-220-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ure Electronics: Single N-Channel 600 V 40 mOhm 107 nC CoolMOS Power Mosfet - TO-247-3

***ark: Mosfet, N-Ch, 600V, 50A, To-247-3; Transistor Polarity:n Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.034Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***ure Electronics: Single N-Channel 600 V 40 mOhm 107 nC CoolMOS Power Mosfet - TO-247-3-4

***nell: MOSFET, N-CH, 600V, 50A, TO-247-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 50A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V;

***ineon: The new 600V CoolMOS C7 series from Infineon offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. | Summary of Features: Reduced switching loss parameters such as Q G, C oss, E oss; Best-in-class figure of merit Q G*R DS(on); Increased switching frequency; Best R (on)*A in the world; Rugged body diode | Benefits: Enables increasing switching frequency without loss in efficiency; Measure showing key parameter for light load and full load efficiency; Doubling the switching frequency will half the size of magnetic components; Smaller packages for same R DS(on); Can be used in many more positions for both hard and soft switching topologies | Target Applications: Server; Telecom; PC power; Solar; Industrial

***icroelectronics: N-CHANNEL 600V - 0.050 Ohm - 60A Max247 Zener-Protected MDmesh(TM)Power MOSFET

***ical: Trans MOSFET N-CH 600V 60A 3-Pin (3+Tab) Max247 Tube

***ser: Power MOSFET Transistors N-Ch 600 Volt 60 Amp

***ponent Stockers USA: 60 A 600 V 0.055 ohm N-CHANNEL Si POWER MOSFET

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 60A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: IC DUAL PCMCIA PWR SWITCH 30SSOP

***icroelectronics SCT: Power MOSFETs, 600V, 60A, Max247, Tube

***ment14 APAC: MOSFET, N CH, 600V, 60A, MAX247; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:560W; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:MAX-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:60A; Package / Case:Max-247; Power Dissipation Pd:560W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:600V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO-247 package

***r Electronics: Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247

***nell: MOSFET, N-CH, 600V, 52A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Powe

***icroelectronics: N-channel 600 V, 0.045 Ohm typ., 52 A MDmesh M2 Power MOSFET in a TO247-4 package

***r Electronics: Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ure Electronics: N-Channel 600 V 55 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-247-4

***nell: MOSFET, N-CH, 600V, 52A, 150DEG C, 350W; Transistor Polarity: N Channel; Continuous Drain Current Id: 52A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.045ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 350W; Transistor Case Style: TO-247; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: MDmesh M2 Series; Automotive Qualification Standard: -; SVHC: No SVHC (15-Jan-2019)

Market price

Part #	Mfg.	Description	Stock	Price
LKK47-06C5 DISTI # LKK47-06C5-ND	IXYS Corporation	MOSFET 2N-CH 600V 47A ISOPLUS264 RoHS: Compliant Min Qty: 25 Container: Tube	Temporarily Out of Stock	25:$34.8380
LKK47-06C5 DISTI # 747-LKK47-06C5	IXYS Corporation	MOSFET 47 Amps 600V RoHS: Compliant	26	1:$37.2600 5:$35.4000 10:$34.4700 25:$31.6700 50:$30.3200 100:$29.4400 250:$27.0100

LKK47-06C5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes